Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Mehrdad Ghiasabadi Farahani"'
Publikováno v:
ACS Applied Electronic Materials. 3:5632-5640
Publikováno v:
Nanoscale. 13:13631-13640
The existence of a morphotropic phase boundary (MPB) inside HfO2–ZrO2 solid solution thin films has been predicted; if it exists, it provides a new path toward an ideal silicon-compatible dielectric. Herein, we investigate the structural evolution
Autor:
Mohammad Hossein Barati Rizi, mehrdad Ghiasabadi Farahani, Jeoung Han Kim, Pentti Karjalainen, P. Sahu
Publikováno v:
SSRN Electronic Journal.
Autor:
Alireza, Kashir, Mehrdad Ghiasabadi, Farahani, Ján, Lančok, Hyunsang, Hwang, Stanislav, Kamba
Publikováno v:
Nanotechnology. 33(15)
A large coercive field
Autor:
Mohammad Hossein Barati Rizi, Mehrdad Ghiasabadi Farahani, Mahdi Aghaahmadi, Jeoung Han Kim, Leo Pentti Karjalainen, Puspendu Sahu
Publikováno v:
Acta Materialia. 240:118309
Publikováno v:
Nanoscale. 13(32)
The existence of a morphotropic phase boundary (MPB) inside HfO
Autor:
Mehrdad Ghiasabadi Farahani, Jeoung Han Kim, Matias Jaskari, Leo Pentti Karjalainen, Puspendu Sahu
Publikováno v:
Materialia. 21:101349
Publikováno v:
Nanotechnology. 33:155703
A large coercive field E C of HfO2 based ferroelectric devices poses critical performance issues in their applications as ferroelectric memories and ferroelectric field effect transistors. A new design to reduce E C by fabricating nanolaminate Hf0.5Z