Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Mehmet Soyuer"'
Autor:
Timothy O. Dickson, Zeynep Toprak Deniz, Martin Cochet, Troy J. Beukema, Marcel Kossel, Thomas Morf, Young-Ho Choi, Pier Andrea Francese, Matthias Brändli, Christian W. Baks, Jonathan E. Proesel, John F. Bulzacchelli, Michael P. Beakes, Byoung-Joo Yoo, Hyoungbae Ahn, Dong-Hyuk Lim, Gunil Kang, Sang-Hune Park, Mounir Meghelli, Hyo Gyuem Rhew, Daniel J. Friedman, Michael Choi, Mehmet Soyuer, Jongshin Shin
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7364844ce6867af825d60fba50c501ea
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830421
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830421
Autor:
A. Serdar Yonar, Pier Andrea Francese, Matthias Brandli, Marcel Kossel, Thomas Morf, Jonathan E. Proesel, Sergey Rylov, Herschel Ainspan, Martin Cochet, Zeynep Deniz, Timothy Dickson, Troy Beukema, Christian Baks, Michael Beakes, John F. Bulzacchelli, Young-Ho Choi, Byoung-Joo Yoo, Hyoungbae Ahn, Dong-Hyuk Lim, Gunil Kang, Sang-Hune Park, Mounir Meghelli, Hyo-Gyuem Rhew, Daniel Friedman, Michael Choi, Mehmet Soyuer, Jongshin Shin
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::431be6feefe9663e90ce21dd76070b80
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830308
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830308
Autor:
Troy J. Beukema, Brian Floyd, Scott K. Reynolds, Ullrich R. Pfeiffer, Janusz Grzyb, C. Haymes, Mehmet Soyuer, Brian P. Gaucher
Publikováno v:
IEEE Journal of Solid-State Circuits. 41:2820-2831
A 0.13-mum SiGe BiCMOS double-conversion superheterodyne receiver and transmitter chipset for data communications in the 60-GHz band is presented. The receiver chip includes an image-reject low-noise amplifier (LNA), RF-to-IF mixer, IF amplifier stri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7000271cff89dbdc36f4146ef0e5da86
https://doi.org/10.1109/jssc.2006.884820
https://doi.org/10.1109/jssc.2006.884820
Autor:
Young H. Kwark, Mounir Meghelli, Michael A. Sorna, Daniel J. Friedman, J. Yang, Benjamin D. Parker, Herschel A. Ainspan, Steven J. Zier, L. Shan, Mehmet Soyuer, Alexander V. Rylyakov, Mark B. Ritter
Publikováno v:
IBM Journal of Research and Development. 47:259-282
Considerable progress has been made in integrating multi-Gb/s functions into silicon chips for data- and telecommunication applications. This paper reviews the key requirements for implementing such functions in monolithic form and describes their im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb44a92f82b0e651f63cae8d8067c853
https://doi.org/10.1147/rd.472.0259
https://doi.org/10.1147/rd.472.0259
Autor:
James S. Dunn, Lawrence E. Larson, Peter Bacon, Huajie Chen, Robert A. Groves, Kathryn T. Schonenberg, James Mecke, K. Stein, Kevin H. Brelsford, David R. Greenberg, Seshadri Subbanna, David C. Ahlgren, Jae-Sung Rieh, Douglas D. Coolbaugh, Basanth Jagannathan, Shwu Jen Jeng, Mehmet Soyuer, Alvin J. Joseph, Richard P. Volant, Bernard S. Meyerson, Gregory G. Freeman, C. Dickey, David L. Harame, Mounir Meghelli, D. A. Herman
Publikováno v:
Japanese Journal of Applied Physics. 41:1111-1123
Silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) BICMOS technology is a stable, ultra-high performance, semiconductor technology capable of supporting mixed-signal, very large-scale integration (VLSI) circuit designs for a variety o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2a6d4a968569d705fb8484abacee3ea
https://doi.org/10.1143/jjap.41.1111
https://doi.org/10.1143/jjap.41.1111
Publikováno v:
IEEE Journal of Solid-State Circuits. 35:1992-1995
Two fully monolithic clock and data recovery (CDR) circuits for serial optical fiber links are presented. One CDR is targeting SONET OC-192 application while the other is a possible 10-GigaBit Ethernet application using 8B/10B coded data. The ICs are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e2b8fcd17a59602539f7863c3c834c4
https://doi.org/10.1109/4.890314
https://doi.org/10.1109/4.890314
Publikováno v:
Proceedings of the IEEE. 88:1572-1582
Over the last decade, SiGe HBT BiCIMOS technology has matured from a laboratory research effort to become a 50/65-GHz fT/fmax silicon-based 0.5-/spl mu/m BiCMOS production technology. This progress has extended silicon-based production technology int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::691f3339ac59c756926513281afbb576
https://doi.org/10.1109/5.888996
https://doi.org/10.1109/5.888996
Autor:
Mehmet Soyuer, Daniel C. Edelstein, Keith A. Jenkins, Herschel A. Ainspan, Joachim N. Burghartz
Publikováno v:
IEEE Journal of Solid-State Circuits. 33:2028-2034
The design and optimization of spiral inductors on silicon substrates, the related layout issues in integrated circuits, and the effect of the inductor-Q an the performance of radio-frequency (RF) building blocks are discussed. Integrated spiral indu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a764c569d4d9fa21842badcc4cd69342
https://doi.org/10.1109/4.735544
https://doi.org/10.1109/4.735544
Autor:
Mehmet Soyuer, David L. Harame, A.R. Shahani, Joachim N. Burghartz, Herschel A. Ainspan, Keith A. Jenkins, M. Dolan, P. Xiao
Publikováno v:
IEEE Journal of Solid-State Circuits. 32:1451-1454
A 10.5- to 11-GHz fully monolithic voltage controlled oscillator circuit implemented in a standard SiGe bipolar technology is presented. An oscillator phase noise of -78 to -87 dBc/Hz is achieved at 100-kHz offset. The tuning range is close to 5% wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b30d3f16467522ed8be6ca398147937a
https://doi.org/10.1109/4.628762
https://doi.org/10.1109/4.628762
Autor:
J. Malinowski, Kenneth J. Stein, Joachim N. Burghartz, Mehmet Soyuer, Keith A. Jenkins, M. Dolan, David L. Harame, M. Kies
Publikováno v:
IEEE Journal of Solid-State Circuits. 32:1440-1445
Several components for the design of monolithic RF transceivers on silicon substrates are presented and discussed. They are integrated in a manufacturable analog SiGe bipolar technology without any significant process alterations. Spiral inductors ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::add555b34bce16210e7e4395f3248d5f
https://doi.org/10.1109/4.628759
https://doi.org/10.1109/4.628759