Výsledky vyhledávání - "Mehdi Zamanian"

Adaptive consensus for heterogeneous unknown nonlinear multi-agent systems with asymmetric input dead-zone: A finite-time approach

Autor: Farzaneh Abdollahi, Mehdi Zamanian, S.K.Y. Nikravesh

Publikováno v: Transactions of the Institute of Measurement and Control. 44:105-120

This study deals with the adaptive finite-time consensus problem of heterogeneous multi-agent systems composed of first-order and second-order agents with unknown nonlinear dynamics and asymmetric input dead-zone under connected undirected topology.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f9cc5d509ba78e422427dd10a94ad506
https://doi.org/10.1177/01423312211024006

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Finite-time consensus of heterogeneous unknown nonlinear multi-agent systems with external disturbances via event-triggered control

Autor: Farzaneh Abdollahi, S.K.Y. Nikravesh, Mehdi Zamanian

Publikováno v: Journal of Vibration and Control. 27:1806-1823

This article investigates the practical finite-time consensus for a class of heterogeneous multi-agent systems composed of first-order and second-order agents with heterogeneous unknown nonlinear dynamics and external disturbances in an undirected co

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::01ddff84857c53fb20f29459a9083221
https://doi.org/10.1177/1077546320948347

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Enhancing the performance of Piezoelectric Energy Harvester under electrostatic actuation using a robust metaheuristic algorithm

Autor: Behnam Firouzi, Ahmad Abbasi, Polat Sendur, Mehdi Zamanian, Huiling Chen

Publikováno v: Engineering Applications of Artificial Intelligence. 118:105619

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::043fe8e5bdc712344f680e0bc1cbc093
https://doi.org/10.1016/j.engappai.2022.105619

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Growing Interest of Advanced Commercial CMOS Technologies for Space and Medical Applications. Illustration with a New Nano-Power and Radiation-Hardened SRAM in 130nm CMOS

Autor: P. Dautriche, Mark A. Lysinger, Philippe Roche, Gilles Gasiot, Mehdi Zamanian, J. M. Daveau

Publikováno v: IOLTS

This paper reviews recent experimental confirmations that the intrinsic radiation robustness of commercial CMOS technologies naturally improves with the down-scaling. When additionally using innovative design techniques, it becomes now possible to as

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::157ea192293a9fdbea91652adce96f06
https://doi.org/10.1109/iolts.2008.60

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A Radiation Hardened Nano-Power 8Mb SRAM in 130nm CMOS

Autor: D. McClure, Philippe Roche, Mehdi Zamanian, N. Sahoo, J. Russell, F. Jacquet, Mark A. Lysinger

Publikováno v: ISQED

An eight megabit rad hard SRAM, implemented in 130 nm CMOS technology, uses stacked capacitors within the memory cell for robustness, supply power gating and internally developed array power supplies to achieve very low soft error rates and standby c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e0db3861f205ff68cadda029e92900b5
https://doi.org/10.1109/isqed.2008.4479692

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A 0.5 mu m diode load 4 Mb SRAM technology using double-level Al plug metal process

Autor: F.S. Chen, W. Gaskins, Y.S. Lin, Pervez Hassan Sagarwala, Fu-Tai Liou, J. Huang, Ravi Sundaresan, C.C. Wei, L. Lu, Frank Randolph Bryant, Robert Louis Hodges, Charles R. Spinner, L. Nguyen, Mehdi Zamanian, G.S. Stagaman, R.O. Miller

Publikováno v: 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers.

A 4 Mb SRAM technology using 0.5 mu m transistors with 12.5 nm gate oxide, TiN local interconnection, polysilicon diode loads, and Al plug double level metallization is described. The use of diode load yields T Omega polysilicon resistors whose value

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::17ec601559836106dd8ce73803bba99e
https://doi.org/10.1109/vtsa.1991.246731

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Plasma charging effects on device degradation from via sputter etch

Autor: M. D. Mc Nicholas, Jimmy Huang, Mehdi Zamanian, Greg Smith, Jamin Michael Ling, Lakshmanna Vishnubhotla, Kaihan A. Ashtiani, Yujen Wu, Fu-Tai Liou

Publikováno v: SPIE Proceedings.

Inductively Coupled Plasma (ICP) and diode sputter etch processes for via filling technology were evaluated in view of the plasma and/or high field damage to the 7 nm gate oxide in both n- and p-channel MOSFETs using 0.35 micrometers CMOS technology.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8500a8ed38d7ad7737e309ca41da7387
https://doi.org/10.1117/12.221148

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