Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Mehdi Saremi"'
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Via size and placement for layer-to-layer connection needs careful assessment. Small via size offers compact pitch and denser connections between metal layers, while larger via size offers reduced resistance for better performance. In this paper, an
Autor:
Buvna Ayyagari-Sangamalli, Ashish Pal, Blessy Alexander, He Ren, El Mehdi Bazizi, Mehdi Saremi, Liu Jiang
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Complementary FET (CFET), implemented by stacking NMOS and PMOS on top of each other, is considered as an emerging option to continue logic scaling beyond 3nm node. It can be configured with a fin-on-fin (fin-based CFET) or sheet-on-sheet (sheet-base
Autor:
Mehdi Saremi, El Mehdi Bazizi, Buvna Ayyagari-Sangamalli, Blessy Alexander, Ashish Pal, Liu Jiang
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Though single diffusion break (SDB) acts as an efficient area-scaling enabler for current CMOS technology nodes, it degrades devices’ variability performance, which can be mitigated by enabling self-aligned SDB (SA-SDB) technology. Unfortunately, S
Autor:
El Mehdi Bazizi, Ashish Pal, Blessy Alexander, Buvna Ayyagari-Sangamalli, Mehdi Saremi, Helen Lee, Liu Jiang, Xi-Wei Lin
Publikováno v:
DRC
Development of a new complex technology such as 3D NAND requires significant efforts in terms of materials screening, process tuning, and device design leading to fabrication and characterization of many test wafers with significant time-to-market co
Autor:
Mehdi Saremi, Benjamin Fox, Robert J. Nemanich, Ricardo Alarcon, Jesse Brown, Srabanti Chowdhury, Mohamadali Malakoutian, Maitreya Dutta, Franz A. M. Koeck, Jason Holmes, Anna Zaniewski, Holly Johnson, Stephen M. Goodnick, Raghuraj Hathwar, Manpuneet Benipal
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 903:297-301
The response of a PIN diamond diode with a 4.5 μ m thick i-layer to α -particles from a 210Po radioactive source has been measured and compared to the response from a 300 μ m thick single crystal type IIa diamond. The results show that this PIN di
Publikováno v:
IEEE Transactions on Electron Devices. 64:4752-4758
To suppress the ambipolar behavior and improve RF performance in tunnel field-effect transistors (TFETs), a Z-shaped (ZS)-TFET is proposed. The proposed ZS-TFET is more scalable than other vertical band-to-band-based TFETs and provides higher ON-stat
Publikováno v:
Journal of Electronic Materials. 46:5570-5576
To increase the breakdown voltage and decrease the ON resistance, a silicon-on-insulator (SOI) lateral double-diffused metal–oxide–semiconductor field-effect transistor (LDMOSFET) in which the drift region extends to the up and down oxides in a s
Autor:
Mehdi Saremi Nezhad, Leila Shameli
Publikováno v:
International Journal of Medical Research and Health Sciences, Vol 6, Iss 1, Pp 58-65 (2017)
The present study aims at investigating the effectiveness of acceptance and commitment therapy on sexual satisfaction of couples in Shiraz. Methods: A pre-test, post-test methodology with one control group and one experimental group is used to examin
Autor:
Gaurav Thareja, El Mehdi Bazizi, Samuel Lin, Ashish Pal, Mehdi Saremi, Sushant Mittal, Blessy Alexander, Benjamin Colombeau, Sanjay Natarajan, Angada B. Sachid, Buvna Ayyagari
Publikováno v:
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Impact of air-spacer at MOL and BEOL on circuit performance at 3nm technology node is studied. Our modeling results show that by introducing air-spacer at MOL and BEOL, parasitic capacitance can be reduced by 18% and circuit performance as simulated
Autor:
T. Miyashita, M. Haverty, Nam-Sung Kim, J. Ferrell, El Mehdi Bazizi, Mehdi Saremi, Ashish Pal, Buvna Ayyagari, Angada B. Sachid, Blessy Alexander, Sushant Mittal
Publikováno v:
DRC
Through-contact highly doped Si epi (TS Epi), in which an additional epi with higher doping is grown on top of the S/D epi, has shown promise of lower contact resistivities $(\rho_{\mathrm{c}})$ owing to reduced Schottky barrier heights (SBH) and tun