Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Mehari Stifanos"'
Dimensionally and thermally stable polymer, containing disordered graphitic structure and adamantane
Publikováno v:
Journal of Polymer Science Part A: Polymer Chemistry. 44:6909-6925
In an attempt to develop a low-k interlayer dielectric, adamantane-diphenyldiethynyl moiety containing oligomer is prepared. Oligomerization of 1,3,5,7-tetrakis[3/4-ethynylphenyl]adamantane (4) is accomplished by a Glaser–Hay oxidative coupling wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56eff083f964f8ef77e75d3afd317277
https://doi.org/10.1002/pola.21788
https://doi.org/10.1002/pola.21788
Autor:
Mehari Stifanos, Amanuel Gebrebrhan, Nancy Iwamoto, Ahila Krishnamoorthy, Deborah Yellowaga, Edward W. Rutter, Richard Spear, Emma Brouk
Publikováno v:
EuroSimE 2008 - International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems.
Molecular modeling was employed to understand various properties found in thick film dielectric layers derived from solution-based sol-gel formulation in order to aid their development. For instance, for formulations used as planarizing layers, it wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::165a453c62879d4818def614b5949957
https://doi.org/10.1109/esime.2008.4525101
https://doi.org/10.1109/esime.2008.4525101
Autor:
Ahila Krishnamoorthy, Richard Spear, Deborah Yellowaga, Amanuel Gebrebrhan, Hai Bien, Marie Lowe, Peter Smith, Mehari Stifanos
Publikováno v:
MRS Proceedings. 1030
Traditional plasma based dielectric films are conformal and cost-prohibitive for large displays. Solution based dielectrics are planarizing in nature and provide a flat surface for indium tin oxide (ITO) layer with the resultant uniform liquid crysta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34333e067969b78f3949295bf464a3c4
https://doi.org/10.1557/proc-1030-g01-07
https://doi.org/10.1557/proc-1030-g01-07
Autor:
Emma Brouk, Brian J. Daniels, Mehari Stifanos, Ahila Krishnamoorthy, Peter Smith, Jinghong Chen, Jan Nedbal
Publikováno v:
MRS Proceedings. 936
We present recent advances on spin-on polymers as gate dielectric for thin film transistors. We have developed film type I with significantly improved dielectric properties. At a curing temperature of 250 °C, the dielectric constant is 3.46, the bre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c85e2c7216ad37b618f72e7ee070f871
https://doi.org/10.1557/proc-0936-l11-03
https://doi.org/10.1557/proc-0936-l11-03
Autor:
Marie Lowe, Amanuel Gebrebrhan, Scott K. Ageno, Shawn M. O'Rourke, Michael Marrs, Ahila Krishnamoorthy, Deborah Yellowaga, Doug Loy, Peter Smith, Richard Spear, Hai Bien, Jeff Dailey, Mehari Stifanos
Publikováno v:
SID Symposium Digest of Technical Papers. 39:140
Organosiloxane based spin on planarizing dielectrics (PTS-E and PTS-R) were developed for application in flat panel displays as a replacement to conformal chemical vapor deposited SiNx. Here we demonstrate the successful use of siloxane-based materia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e3df14bc363a4e25a6c7b84ad8b38c3
https://doi.org/10.1889/1.3069412
https://doi.org/10.1889/1.3069412
Autor:
Ahila Krishnamoorthy, Mehari Stifanos, Wenya Fan, Jinghong Chen, Jeff Rose, Brian J. Daniels, Jan Nedbal, Emma Brouk, Peter Smith
Publikováno v:
SID Symposium Digest of Technical Papers. 37:1878
We present spin-on polymer films with significantly improved dielectric properties for TFT gate dielectric applications. Breakdown voltage//leakage current//CV hysteresis are 4.10 MV/cm at 1 μA/cm2//4.9 × 10−8 A/cm2 at 2.5 MV/cm//3.4 V and 4.73 M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cc69fd11e17e4e17c2b2ec0a2135997
https://doi.org/10.1889/1.2433412
https://doi.org/10.1889/1.2433412