Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Mehak Ashraf Mir"'
Autor:
Rasik Rashid Malik, Mehak Ashraf Mir, Zarak Bhat, Ahtisham Pampori, Yogesh Singh Chauhan, Sheikh Aamir Ahsan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 789-797 (2021)
In this work, we report the development of a new physics-based analytical model for current and charge characteristics of Double Channel (DC) Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs). The model has at its core the self-consisten
Externí odkaz:
https://doaj.org/article/69ef912a32b0470d9b60c8a4c9d9f025
Autor:
Rajarshi Roy Chaudhuri, Vipin Joshi, Amratansh Gupta, Tanmay Joshi, Rasik Rashid Malik, Mehak Ashraf Mir, Sayak Dutta Gupta, Mayank Shrivastava
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4ee04cc34e14f23c198e9c78209b719
https://doi.org/10.1109/irps48203.2023.10118255
https://doi.org/10.1109/irps48203.2023.10118255
Autor:
Rasik Rashid Malik, Vipin Joshi, Rajarshi Roy Chaudhuri, Mehak Ashraf Mir, Zubear Khan, Avinas N Shaji, Madhura Bhattacharya, Anup T. Vitthal, Mayank Shrivastava
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49b53e7a67a1f4da1dea8217b34b3fa7
https://doi.org/10.1109/irps48203.2023.10117793
https://doi.org/10.1109/irps48203.2023.10117793
Autor:
Mehak Ashraf Mir, Vipin Joshi, Rajarshi Roy Chaudhuri, Mohammad Ateeb Munshi, Rasik Rashid Malik, Mayank Shrivastava
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::855619ee9f947a1ef73a3c95783183f9
https://doi.org/10.1109/irps48203.2023.10117664
https://doi.org/10.1109/irps48203.2023.10117664
Autor:
Mehak Ashraf Mir, Sajad A. Loan
Publikováno v:
2022 5th International Conference on Multimedia, Signal Processing and Communication Technologies (IMPACT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d36bb35e779e083fcc27bb43de18267
https://doi.org/10.1109/impact55510.2022.10029328
https://doi.org/10.1109/impact55510.2022.10029328
Autor:
Shivendra Kumar Singh, Gianluca Fiori, Mehak Ashraf Mir, Enrique G. Marin, Thomas Mueller, Marta Perucchini, Dmitry K. Polyushkin, Sheikh Aamir Ahsan
Publikováno v:
IEEE Transactions on Electron Devices
We report a charge-based analytic and explicit compact model for field effect transistors (FETs) based on two-dimensional materials (2DMs), for the simulation of 2DM- based analog and digital circuits. The device electrostatics is handled by invoking
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10b8b44b5bb0c57c33aefcea93a18a74
http://hdl.handle.net/11568/1134847
http://hdl.handle.net/11568/1134847
