Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Meghna G. Mankalale"'
Autor:
Masoud Zabihi, Arvind K. Sharma, Meghna G. Mankalale, Zamshed Iqbal Chowdhury, Zhengyang Zhao, Salonik Resch, Ulya R. Karpuzcu, Jian-Ping Wang, Sachin S. Sapatnekar
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 6, Iss 1, Pp 71-79 (2020)
This article presents a method for analyzing the parasitic effects of interconnects on the performance of the STT-MTJ-based computational random access memory (CRAM) in-memory computation platform. The CRAM is a platform that makes a small reconfigur
Externí odkaz:
https://doaj.org/article/e2947372c0da43b6b30bc48893c20bb7
Autor:
Zhaoxin Liang, Meghna G. Mankalale, Jiaxi Hu, Zhengyang Zhao, Jian-Ping Wang, Sachin S. Sapatnekar
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 4, Iss 2, Pp 51-59 (2018)
Magnetoelectric spin-orbit (MESO) logic is a promising spin-based post-CMOS logic computation paradigm. This paper explores the application of the basic MESO device concept to more complex logic structures. A simulation framework is first developed t
Externí odkaz:
https://doaj.org/article/ced6b8b381f54a799307f0c05e9b621b
Autor:
Ibrahim Ahmed, Zhengyang Zhao, Meghna G. Mankalale, SACHIN S. Sapatnekar, Jian-Ping Wang, Chris H. Kim
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 3, Pp 74-82 (2017)
The spin transfer torque magnetoresistive random access memory (STT-MRAM) is the leading candidate for spin-based memories. Nevertheless, the high write energy and read disturbance of the STT-MRAM motivated researchers to find other solutions. The sp
Externí odkaz:
https://doaj.org/article/647fbaba35734b12b891cd810f771d60
Autor:
Meghna G. Mankalale, Zhaoxin Liang, Zhengyang Zhao, Chris H. Kim, Jian-Ping Wang, Sachin S. Sapatnekar
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 3, Pp 27-36 (2017)
This paper proposes composite-input magnetoelectric-based logic technology (CoMET), a fast and energy-efficient spintronics device for logic applications. An input voltage is applied to a ferroelectric (FE) material, in contact with a composite struc
Externí odkaz:
https://doaj.org/article/88804f79631f4aee864b66959f2a5440
Autor:
Zamshed I. Chowdhury, Masoud Zabihi, Zhengyang Zhao, Salonik Resch, Arvind Sharma, Sachin S. Sapatnekar, Meghna G. Mankalale, Jian-Ping Wang, Ulya R. Karpuzcu
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 6, Iss 1, Pp 71-79 (2020)
This article presents a method for analyzing the parasitic effects of interconnects on the performance of the STT-MTJ-based computational random access memory (CRAM) in-memory computation platform. The CRAM is a platform that makes a small reconfigur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::608083068aa97832fb97bfa09959679d
https://doi.org/10.1109/jxcdc.2020.2985314
https://doi.org/10.1109/jxcdc.2020.2985314
Autor:
Sachin S. Sapatnekar, Jiaxi Hu, Zhaoxin Liang, Zhengyang Zhao, Meghna G. Mankalale, Jian-Ping Wang
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 4, Iss 2, Pp 51-59 (2018)
Magnetoelectric spin-orbit (MESO) logic is a promising spin-based post-CMOS logic computation paradigm. This paper explores the application of the basic MESO device concept to more complex logic structures. A simulation framework is first developed t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cb8de81b2358481c4c29124a4230726
https://ieeexplore.ieee.org/document/8485738/
https://ieeexplore.ieee.org/document/8485738/
Autor:
Chris H. Kim, Jian-Ping Wang, Zhaoxin Liang, Zhengyang Zhao, Meghna G. Mankalale, Sachin S. Sapatnekar
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 3, Pp 27-36 (2017)
This paper proposes composite-input magnetoelectric-based logic technology (CoMET), a fast and energy-efficient spintronics device for logic applications. An input voltage is applied to a ferroelectric (FE) material, in contact with a composite struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d51e74c16f47605fda6a344faf218ad
https://ieeexplore.ieee.org/document/7893717/
https://ieeexplore.ieee.org/document/7893717/
Autor:
Sachin S. Sapatnekar, Meghna G. Mankalale, Chris H. Kim, Ibrahim Ahmed, Zhengyang Zhao, Jian-Ping Wang
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 3, Pp 74-82 (2017)
The spin transfer torque magnetoresistive random access memory (STT-MRAM) is the leading candidate for spin-based memories. Nevertheless, the high write energy and read disturbance of the STT-MRAM motivated researchers to find other solutions. The sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::638fcbb9d43accc3ec60ccb3600e2247
https://ieeexplore.ieee.org/document/8067488/
https://ieeexplore.ieee.org/document/8067488/
Autor:
Jian-Ping Wang, Meghna G. Mankalale, X. Sharon Hu, Robert Perricone, Sachin S. Sapatnekar, Zhaoxin Liang, Michael Niemier
Publikováno v:
DATE
As we approach the limits of CMOS scaling, researchers are developing "beyond-CMOS" technologies to sustain the technological benefits associated with device scaling. Spin-tronic technologies have emerged as a promising beyond-CMOS technology due to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e353561f8026977e067da5a646380ddd
https://doi.org/10.23919/date.2019.8714916
https://doi.org/10.23919/date.2019.8714916
Autor:
Susmita Dey Manasi, Sachin S. Sapatnekar, Jiang Hu, Ibrahim Ahmed, Farhana Sharmin Snigdha, Meghna G. Mankalale
Publikováno v:
ASP-DAC
This work presents a dynamic energy reduction approach for hardware accelerators for convolutional neural networks (CNN). Two methods are used: (1) an adaptive data-dependent scheme to selectively activate a subset of all neurons, by narrowing down t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f624a7879f13d4949910527b1758449
https://doi.org/10.1145/3287624.3287663
https://doi.org/10.1145/3287624.3287663