Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Megdanis, A.C."'
Autor:
Verdonckt-Vandebroek, S., Crabbe, E.F., Meyerson, B.S., Harame, D.L., Restle, P.J., Stork, J.M.C., Megdanis, A.C., Stanis, C.L., Bright, A.A., Kroesen, G.M.W., Warren, A.C.
Publikováno v:
VLSI technology : symposium : digest of technical papers, May 28-30, 1991, Oiso, 105-106
STARTPAGE=105;ENDPAGE=106;TITLE=VLSI technology : symposium : digest of technical papers, May 28-30, 1991, Oiso
STARTPAGE=105;ENDPAGE=106;TITLE=VLSI technology : symposium : digest of technical papers, May 28-30, 1991, Oiso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::570753471878472041537b0846a233fc
https://research.tue.nl/nl/publications/4d59e0c2-4d7b-4c32-a044-caf82ae1ad6f
https://research.tue.nl/nl/publications/4d59e0c2-4d7b-4c32-a044-caf82ae1ad6f
Autor:
Verdonckt-Vandebroek, Sophie, Crabbe, E.F., Meyerson, B.S., Harame, D.L., Restle, Phillip J., Stork, J.M.C., Megdanis, A.C., Stanis, C.L., Bright, A.A., Kroesen, G.M.W., Warren, A.C.
Publikováno v:
IEEE Electron Device Letters, 12(8), 447-449. Institute of Electrical and Electronics Engineers
A novel subsurface SiGE-channel p-MOSFET is demonstrated in which modulation doping is used to control the threshold voltage without degrading the channel mobility. A novel device design consisting of a graded SiGe channel, an n+ polysilicon gate, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::d1e720ae702ddc8f021b519b467689fe
https://research.tue.nl/nl/publications/163b7870-f903-4dcd-aed1-32bbc416d2c0
https://research.tue.nl/nl/publications/163b7870-f903-4dcd-aed1-32bbc416d2c0
Publikováno v:
1985 International Electron Devices Meeting; 1985, p220-223, 4p
Publikováno v:
IEEE Transactions on Electron Devices; 1986, Vol. 33 Issue 10, p1535-1538, 4p
Autor:
Pearson, D.J., Reynolds, S.K., Megdanis, A.C., Gowda, S., Wrenner, K.R., Immediato, M., Galbraith, R.L., Shin, H.J.
Publikováno v:
IEEE Journal of Solid-State Circuits; 1995, Vol. 30 Issue 12, p1517-1523, 7p
Autor:
Crabbe, E.F., Comfort, J.H., Lee, W., Cressler, J.D., Meyerson, B.S., Megdanis, A.C., Sun, J.Y.-C., Stork, J.M.C.
Publikováno v:
IEEE Electron Device Letters; 1992, Vol. 13 Issue 5, p259-261, 3p
Autor:
Cressler, J.D., Warnock, J., Coane, P.J., Chiong, K.N., Rothwell, M.E., Jenkins, K.A., Burghartz, J.N., Petrillo, E.J., Mazzeo, N.J., Megdanis, A.C., Hohn, F.J., Thomson, M.G., Sun, J.Y.-C., Tang, D.D.
Publikováno v:
IEEE Electron Device Letters; 1992, Vol. 13 Issue 5, p262-264, 3p
Autor:
Burghartz, J.N., Megdanis, A.C., Cressler, J.D., Sun, J.Y.-C., Stanis, C.L., Comfort, J.H., Jenkins, K.A., Cardone, F.
Publikováno v:
IEEE Electron Device Letters; 1991, Vol. 12 Issue 12, p679-681, 3p
Autor:
Verdonckt-Vandebroek, S., Crabbe, E.F., Meyerson, B.S., Harame, D.L., Restle, P.J., Stork, J.M.C., Megdanis, A.C., Stanis, C.L., Bright, A.A., Kroesen, G.M.W., Warren, A.C.
Publikováno v:
IEEE Electron Device Letters; 1991, Vol. 12 Issue 8, p447-449, 3p
Autor:
Pearsen, D.J., Reynolds, S.K., Megdanis, A.C., Gowda, S., Wrenner, K.R., Immediato, M., Galbraith, R.L., Shin, H.J.
Publikováno v:
Proceedings ISSCC '95 - International Solid-State Circuits Conference; 1995, p80-81, 2p