Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Megan O. Hill"'
Autor:
Anna P. S. Crema, Marian C. Istrate, Alexandre Silva, Veniero Lenzi, Leonardo Domingues, Megan O. Hill, Valentin S. Teodorescu, Corneliu Ghica, Maria J. M. Gomes, Mario Pereira, Luís Marques, Judith L. MacManus‐Driscoll, José P. B. Silva
Publikováno v:
Advanced Science, Vol 10, Iss 15, Pp n/a-n/a (2023)
Abstract A new approach for the stabilization of the ferroelectric orthorhombic ZrO2 films is demonstrated through nanosecond laser annealing (NLA) of as‐deposited Si/SiOx/W(14 nm)/ZrO2(8 nm)/W(22 nm), grown by ion beam sputtering at low temperatur
Externí odkaz:
https://doaj.org/article/cfd144db6fac4c4f80dc03099563f9a3
Autor:
Anna P. S. Crema, Marian C. Istrate, Alexandre Silva, Veniero Lenzi, Leonardo Domingues, Megan O. Hill, Valentin S. Teodorescu, Corneliu Ghica, Maria J. M. Gomes, Mario Pereira, Luís Marques, Judith L. MacManus‐Driscoll, José P. B. Silva
Publikováno v:
Advanced Science. 10
Autor:
Megan O. Hill, Paul Schmiedeke, Chunyi Huang, Siddharth Maddali, Xiaobing Hu, Stephan O. Hruszkewycz, Jonathan J. Finley, Gregor Koblmüller, Lincoln J. Lauhon
Publikováno v:
ACS nano. 16(12)
InGaAs quantum wells embedded in GaAs nanowires can serve as compact near-infrared emitters for direct integration onto Si complementary metal oxide semiconductor technology. While the core-shell geometry in principle allows for a greater tuning of c
Autor:
José P.B. Silva, Marian C. Istrate, Markus Hellenbrand, Atif Jan, Maximilian T. Becker, Joanna Symonowicz, Fábio G. Figueiras, Veniero Lenzi, Megan O. Hill, Corneliu Ghica, Konstantin N. Romanyuk, Maria J.M. Gomes, Giuliana Di Martino, Luís Marques, Judith L. MacManus-Driscoll
Publikováno v:
Applied Materials Today
A new approach for epitaxial stabilisation of ferroelectric orthorhombic (o-) ZrO2 films with negative piezoelectric coefficient in ∼ 8nm thick films grown by ion-beam sputtering is demonstrated. Films on (011)-Nb:SrTiO3 gave the oriented o-phase,
Autor:
Lert Chayanun, Susanna Hammarberg, Megan O. Hill, Sebastian Kalbfleisch, Vilgailė Dagytė, Magnus Heurlin, Ulf Johansson, Alexander Björling, Jesper Wallentin, Lincoln J. Lauhon, Alexander Wyke, Magnus T. Borgström
Publikováno v:
Nano Research. 13:2460-2468
Axially heterostructured nanowires are a promising platform for next generation electronic and optoelectronic devices. Reports based on theoretical modeling have predicted more complex strain distributions and increased critical layer thicknesses tha
Autor:
Martin Friedl, Wonjong Kim, Kris Cerveny, Lucas Güniat, Mohammad Samani, Nicholas Morgan, Lincoln J. Lauhon, Didem Dede, Dominik M. Zumbühl, Anna Fontcuberta i Morral, J. Segura-Ruiz, Megan O. Hill, Chunyi Huang
Publikováno v:
Nano Letters
'Nano Letters ', vol: 20, pages: 3577-3584 (2020)
'Nano Letters ', vol: 20, pages: 3577-3584 (2020)
Selective-area epitaxy provides a path toward high crystal quality, scalable, complex nanowire networks. These high-quality networks could be used in topological quantum computing as well as in ultrafast photodetection schemes. Control of the carrier
Autor:
Yong S. Chu, Irene Calvo-Almazán, Hanfei Yan, Eric Colegrove, Xiaojing Huang, Michael Stuckelberger, Andrew Ulvestad, Martin V. Holt, Lincoln J. Lauhon, Mariana I. Bertoni, Siddharth Maddali, Stephan O. Hruszkewycz, Evgeny Nazaretski, Megan O. Hill, Tursun Ablekim
Publikováno v:
IEEE journal of photovoltaics 9(6), 1790-1799 (2019). doi:10.1109/JPHOTOV.2019.2942487
IEEE journal of photovoltaics 9(6), 1790-1799 (2019). doi:10.1109/JPHOTOV.2019.2942487
Strain within grains and at grain boundaries (GBs) in polycrystalline thin-film absorber layers limits the overall performance because of higher defect concen
Strain within grains and at grain boundaries (GBs) in polycrystalline thin-film absorber layers limits the overall performance because of higher defect concen
Correlated Chemical and Electrically Active Dopant Analysis in Catalyst-Free Si-Doped InAs Nanowires
Autor:
J. Treu, Lincoln J. Lauhon, Markus Döblinger, H. Riedl, Max Sonner, Alexander Hirler, Megan O. Hill, J. Becker, Gregor Koblmüller, Jonathan J. Finley
Publikováno v:
ACS Nano. 12:1603-1610
Direct correlations between dopant incorporation, distribution, and their electrical activity in semiconductor nanowires (NW) are difficult to access and require a combination of advanced nanometrology methods. Here, we present a comprehensive invest
Autor:
Lutz Geelhaar, Ullrich Pietsch, Oliver Marquardt, Jonas Lähnemann, Oliver Brandt, Pierre Corfdir, Lincoln J. Lauhon, A. Al Hassan, Megan O. Hill, M. Ramsteiner
Publikováno v:
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
III-V semiconductor nanowires exhibit unique features for application in novel optoelectronic devices. Due to their large surface-to-volume ratio, the realization of heterostructures beyond the capabilities of planar growth, that can still be integra
Autor:
Irene Calvo-Almazán, Martin V. Holt, Megan O. Hill, Ullrich Pietsch, Arman Davtyan, Chunyi Huang, Guanhui Gao, Jesús Herranz, Lutz Geelhaar, Oliver Marquardt, Uwe Jahn, Stephan O. Hruszkewycz, Jonas Lähnemann, Lincoln J. Lauhon, Ali Al Hassan
While the properties of wurtzite GaAs have been extensively studied during the past decade, little is known about the influence of the crystal polytype on ternary (In,Ga)As quantum well structures. We address this question with a unique combination o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a31e770cd22346030cd377138194c4b
http://arxiv.org/abs/1903.07372
http://arxiv.org/abs/1903.07372