Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Meei-Ru Chen"'
Autor:
Meei-Ru Chen, 陳美汝
102
In this study, Aluminium Nitride thin films have been deposited directly on sapphire substrates at low temperatures (300-500℃) by a helicon sputtering system. The structural quality of AlN films was characterized by X-ray diffractometry an
In this study, Aluminium Nitride thin films have been deposited directly on sapphire substrates at low temperatures (300-500℃) by a helicon sputtering system. The structural quality of AlN films was characterized by X-ray diffractometry an
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/75321229388226053077
Autor:
Meei Ru Chen, Li Syuan Lu, Hui Ling Kao, Wei Chen Chueh, Po Chun Kuo, Wen-Hao Chang, Jyh Shin Chen, Hung Yi Chien
Publikováno v:
Journal of Crystal Growth. 544:125726
AlN films are commonly deposited on sapphire substrates. However, the growth process usually requires high temperature and multi-steps to improve the film quality, due to the large lattice mismatch between the film and substrate. Here we demonstrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::002a11b45b2a0f5d4d1d4f6371a3b863
https://doi.org/10.1016/j.jcrysgro.2020.125726
https://doi.org/10.1016/j.jcrysgro.2020.125726
Autor:
Hsuan-Shao Chen, Kun-Feng Chien, Chu-Shou Yang, Wu-Ching Chou, Wen-Chung Fan, Meei-Ru Chen, Luc Huy Hoang, Hui-Ling Kao, An-Jye Tzou, Syang-Ywan Jeng
Publikováno v:
IEEE Transactions on Magnetics. 50:1-4
${\rm Zn}_{1-x}{\rm Mn}_{x}{\rm O}$ films $(0\leq{x}\leq 0.070)$ were grown by plasma-assisted molecular beam epitaxy on Si substrates with AlN buffer layers. For low Mn concentration samples, ${x}\leq 0.02$ , photoluminescence spectra show strong ne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::272bd670fea75eec8f32cd0cea6cb54b
https://doi.org/10.1109/tmag.2014.2304674
https://doi.org/10.1109/tmag.2014.2304674
Autor:
Ming-Guei Wu, Jyh Shin Chen, Yen Liang, Meei-Ru Chen, Hui-Ling Kao, Guan-Wei Lee, An-Jye Tzou
Publikováno v:
Sensor Letters. 11:1606-1610
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fffb0c1fdf11525acce4f5877994665d
https://doi.org/10.1166/sl.2013.3024
https://doi.org/10.1166/sl.2013.3024
Publikováno v:
Thin Solid Films. 519:5090-5094
This article presents an investigation on the epitaxial growth of non-polar a-plane AlN thin films by low temperature sputtering using ZnO buffer layers. Prior to the deposition of the AlN films, epitaxial growth of a-plane ZnO thin films on r-plane
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::880accaa19b1cbb72074cf1d067654aa
https://doi.org/10.1016/j.tsf.2011.01.149
https://doi.org/10.1016/j.tsf.2011.01.149
Autor:
Hui-Ling Kao, Chih Hsiang Hsu, Meei Ru Chen, Tzu Chieh Chen, Sheng Hsiung Chang, Jen-Inn Chyi
Publikováno v:
physica status solidi (a). 207:224-228
AlN, an important semiconductor with the widest band gap among III-nitrides, was employed to construct solar blind metal―semiconductor―metal photodetectors (MSM-PDs). MSM-PDs were fabricated on AlN epitaxial thin films deposited on GaN/sapphire u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d5f5b3f944f55ccdedf9d9780a19a3e
https://doi.org/10.1002/pssa.200925244
https://doi.org/10.1002/pssa.200925244
Publikováno v:
2010 5th IEEE Conference on Industrial Electronics and Applications.
Epitaxial single crystal AlN thin films have been obtained on (001) sapphire substrates by helicon sputtering system at growth temperature of 450°C. Surface acoustic wave (SAW) filters were fabricated on AlN/sapphire. The center frequency is 354.2MH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ab11de18b7063a360bb111fe8483b9e
https://doi.org/10.1109/iciea.2010.5514720
https://doi.org/10.1109/iciea.2010.5514720
Autor:
W. C. Chen, Jen-Inn Chyi, Meei Ru Chen, C. H. Hsu, Tzu Chieh Chen, Hui-Ling Kao, Chung Yi Lin, Yueh Ting Lin
Publikováno v:
IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 55(2)
Epitaxial AlN films were prepared on GaN/sapphire using a helicon sputtering system at the low temperature of 300 degrees C. Surface acoustic wave (SAW) devices fabricated on AlN/GaN/sapphire exhibited superior characteristics compared with those mad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd879c5e7bb92d4d9c7bdef0b52a8cc7
https://pubmed.ncbi.nlm.nih.gov/18334354
https://pubmed.ncbi.nlm.nih.gov/18334354
Autor:
Jyh Shin Chen, An-Jye Tzou, Hui-Ling Kao, Ming-Guei Wu, Meei-Ru Chen, Hou-Guang Chen, Hsiung Chou
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 33:031503
AlN thin films have been deposited directly on c-plane sapphire substrates at low temperatures by a helicon sputtering system. The structural quality of AlN epitaxial films was characterized by x-ray diffractometry and transmission electron microscop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa7d780ea58de5f0be98ed2f8eb99db4
https://doi.org/10.1116/1.4915124
https://doi.org/10.1116/1.4915124
Autor:
Meei-Ru Chen, Hou-Guang Chen, Hui-Ling Kao, Ming-Guei Wu, An-Jye Tzou, Jyh Shin Chen, Hsiung Chou
Publikováno v:
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; May/Jun2015, Vol. 33 Issue 3, p1-6, 6p