Evidence of charge carrier number fluctuations in InN thin films?

Autor: Rani Mutta, Geeta, Guillet, Bruno, Mechim, Laurence, Vilalta Clemente, Arantxa, Grandal Quintana, Javier, Sánchez García, Miguel Angel, Martin Horcajo, Sara, Calle Gómez, Fernando

Publikováno v: Proceedings of 21st International Conference on Noise and Fluctuations | 21st International Conference on Noise and Fluctuations | 12/06/2011-16/06/2011 | Toronto, EEUU
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Due to its small band-gap and its high mobility, InN is a promising material for a large number of key applications like band-gap engineering for high efficiency solar cells, light emitting diodes, and high speed devices. Unfortunately, it has been r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::19b3316225c57d41588ef62b9dfc7704
http://oa.upm.es/12919/