Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Md. Tawabur Rahman"'
Autor:
Md. Mosarof Hossain Sarkar, Md. Sherajul Islam, Abdullah Arafat, A. S. M. Jannatul Islam, Naim Ferdous, Md. Tawabur Rahman, Minhaz Uddin Sohag, Md. Al Imran Fahim, Catherine Stampfl, Jeongwon Park
Publikováno v:
The Journal of Physical Chemistry C. 126:6373-6384
Autor:
Salvir Hossain, Md Tawabur Rahman
Publikováno v:
2023 International Conference on Electrical, Computer and Communication Engineering (ECCE).
Autor:
Md Ashiqur Rahman Laskar, Md Tawabur Rahman, Khan Mamun Reza, Abdullah Al Maruf, Nabin Ghimire, Brian A Logue, Quinn Qiao
Publikováno v:
Journal of Materials Chemistry C.
The visual and instantaneous detection of trace levels of toxic lead ions (Pb2+) in water is still challenging. In this study, a perovskite precursor-based fluorescent sensor for visual and instantaneous...
Autor:
Md Tawabur Rahman, Md. Saleh Akram Bhuiyan, Md Jahirul Islam, Khan Mamun Reza, Ashim Gurung, Quinn Qiao
Publikováno v:
2022 12th International Conference on Electrical and Computer Engineering (ICECE).
Autor:
Mahesh Kumar, Adarsh Nigam, Neeraj Goel, Thirumaleshwara N. Bhat, Surani Bin Dolmanan, Sukant K. Tripathy, Md. Tawabur Rahman, Qiquan Qiao
Publikováno v:
Sensors and Actuators B: Chemical. 309:127832
A sensor for highly sensitive, selective, and rapid determination of the trace amount of toxic Hg2+ ions is developed for the first-time using molybdenum disulfide (MoS2) functionalized AlGaN/GaN high electron mobility transistor (HEMT). The vertical
Autor:
Md. Tawabur Rahman, Md. Fahim-Al-Fattah, Asif Abdullah Khan, Ashraful G. Bhuiyan, Md. Sherajul Islam
Publikováno v:
2015 International Conference on Electrical Engineering and Information Communication Technology (ICEEICT).
This paper presents a detailed study of DC and RF characteristics of GFET using analytical approach. GFET shows promising performance in terms of faster saturation as well as extremely high cut-off frequency. A significant shift of the Dirac point as
Publikováno v:
International Journal of Nanoscience. 15:1640001
This paper presents a detailed study of theoretical performance of graphene field effect transistor (GFET) using analytical approach. GFET shows promising performance in terms of faster saturation as well as extremely high cutoff frequency (3.9[Formu
Publikováno v:
2012 International Conference on Informatics, Electronics & Vision (ICIEV).
In this paper, an attempt has been made to investigate the impact of free space transfer function taking into effects of atmospheric turbulence, pointing errors and path loss factor on the performance of free space optical communication system. The p
Conference
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