Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Md. Mottaleb Hossain"'
Publikováno v:
Journal of Lightwave Technology. 37:3315-3323
The well-known analytical formula for the excess noise factor associated with avalanche photodiodes (APDs), developed by R. J. McIntyre in 1966, assumes the injection of either an electron or a hole at the edge of the APD's avalanche region. This for
Autor:
Liang Qiao, Mona M. Hella, Aina N. A. P. Baharuddin, J. S. Cheong, Sagar Ray, Majeed M. Hayat, John P. R. David, Md. Mottaleb Hossain
Publikováno v:
Journal of Lightwave Technology. 35:2315-2324
Mean-gain and excess-noise measurements are presented for a 350 × 350 μm2 P+/N-well/P-sub and a 270 × 270 μm2 N-well/P-sub avalanche photodetectors fabricated using 0.13-μm CMOS technology. The active area of the P+/N-well/P-sub device was divid
Autor:
Majeed M. Hayat, Md. Mottaleb Hossain
Publikováno v:
2019 IEEE Photonics Conference (IPC).
A previously reported CMOS-compatible dual avalanche photodiode design is exploited to develop a maximum-likelihood spectral-sensing algorithm, which maps the dual photocurrents to the monochromatic light's wavelength. Optimization over the reverse b
Autor:
Ashraful G. Bhuiyan, Akio Yamamoto, Md. Mottaleb Hossain, Md. Abdullah-AL Humayun, Akihiro Hashimoto, Md. Tanvir Hasan
Publikováno v:
IEICE Transactions on Electronics. :255-261
This paper reports on a theoretical study and modeling of a 1.55µm quantum dot heterostructure laser using InN as a promising candidate for the first time. Details of design and theoretical analysis of probability distribution of the optical transit
Publikováno v:
2015 IEEE Photonics Conference (IPC).
This paper reports linear-mode p-n junction silicon avalanche photodiodes (APD) fabricated in 1 µm standard CMOS process. Measured mean gain of ∼50 was obtained at a sufficiently low operating voltage of 8.7 V.
Publikováno v:
2014 IEEE Photonics Conference.
Publikováno v:
SPIE Proceedings.
The theoretical characteristics of photon emission at 1.55 μ m wavelength are presented considering single layer of indium nitride (InN) quantum dots in the active region. The transparency threshold has been obtained at photon energy of 0.8016 eV an
Publikováno v:
2013 IEEE Photonics Conference.
CMOS compatible avalanche photodiode is designed, modeled and fabricated. Calculated mean gain, avalanche breakdown voltage, excess-noise factor, as well as the measured dark-current and spectral response are reported.