Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Md. Mahfuz Alam"'
Autor:
Md Mahfuz Alam, Khondoker Mohammad Alam, Rumana Momotaz, Most Arifunnahar, Md Mosiur Rahman Bhuyin Apu, Shaikh Sharmin Siddique
Publikováno v:
Heliyon, Vol 10, Iss 12, Pp e33165- (2024)
Bangladesh Agricultural Research Institute (BARI) released two beautiful Lilium varieties in 2020. In the same year the farmers in Gazipur district reported a set of disease symptoms on these flowers and alerted the Plant Pathology Division of BARI.
Externí odkaz:
https://doaj.org/article/67fb06aef1fe42f184f3cf1728824082
Autor:
Fatima Nur Nabila, Md Bodruddoza Mia, Md Yousuf Gazi, Md Mahin Uddin, Md Nahid Al Montakim, Md Mahfuz Alam
Publikováno v:
The Dhaka University Journal of Earth and Environmental Sciences. 11:27-42
Lakes in the Dhaka city have been facing extreme deterioration both by quantity and quality due to rapid urban and population growth for several decades. The prime objective is to assess the spatiotemporal changes of water quality and water quantity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::461f7f72cb6e68838c552ab63003ed9f
https://doi.org/10.3329/dujees.v11i1.63709
https://doi.org/10.3329/dujees.v11i1.63709
Autor:
Yusuke Hoshi, Wagatsuma Youya, Michihiro Yamada, Kentarou Sawano, Kohei Hamaya, Kazuya Okada, Md. Mahfuz Alam
Publikováno v:
ECS Transactions. 98:499-503
We fabricate tensile-strained SiGe layers on patterned Ge-on-Si(111) and investigate their surface morphologies and strain states. It is demonstrated that the surface ridge roughness involving crack formation is completely avoided by the patterning o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fbb301fc54200672cf90e6d3140cb10
https://doi.org/10.1149/09805.0499ecst
https://doi.org/10.1149/09805.0499ecst
Autor:
Youya Wagatsuma, Rena Kanesawa, Md. Mahfuz Alam, Kazuya Okada, Takahiro Inoue, Michihiro Yamada, Kohei Hamaya, Kentarou Sawano
Publikováno v:
Applied Physics Express. 16:015502
We propose a method for obtaining crack-free fully-strained SiGe layers on Ge(111). To achieve the crack-free strained SiGe layers, we introduce a patterned area with a sufficient depth (step height) of more than 1 μm on Ge(111) substrates. Because
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21244fc53cd07582f8eca26f540b8cc7
https://doi.org/10.35848/1882-0786/aca751
https://doi.org/10.35848/1882-0786/aca751
Autor:
Md. Mahfuz Alam, Youya Wagatsuma, Kazuya Okada, Michihiro Yamada, Kohei Hamaya, Kentarou Sawano
Publikováno v:
ECS Meeting Abstracts. :1212-1212
In recent years, Ge has emerged as one of the most promising materials toward next-generation high-performance and low-power-consumption optoelectronic devices. Moreover, SiGe/Ge heterostructures, consisting of strained SiGe with high Ge contents and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d129ce0d8322509eb3092cd408ad027
https://doi.org/10.1149/ma2022-02321212mtgabs
https://doi.org/10.1149/ma2022-02321212mtgabs
Autor:
Youya Wagatsuma, Rena Kanesawa, Md. Mahfuz Alam, Kazuya Okada, Michihiro Yamada, Kohei Hamaya, Kentarou Sawano
Publikováno v:
ECS Meeting Abstracts. :1222-1222
Recently, it has been shown that Ge and SiGe with (111) orientation are very attractive for applications to spintronic devices because high quality ferromagnetic materials can be epitaxially grown on the Ge(111)[1]. Moreover strain introduction is ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21093bc7f6c6e434c5cbb48ca6ab3a3e
https://doi.org/10.1149/ma2022-02321222mtgabs
https://doi.org/10.1149/ma2022-02321222mtgabs
Autor:
Md. Mahfuz Alam, Dong Wang, M. Zhang, Kohei Nakae, Kentarou Sawano, Z. Di, Hiroshi Nakashima, K. Yamamoto, Hiroshi Akamine, Z. Xue
Publikováno v:
ECS Transactions. 93:73-77
We electrically characterized Ge-on-Insulator (GOI) fabricated by Smart-Cut™ method. Annealing improved electrical characteristics of the p-GOI. On the other hand, conduction type of the n-GOI changed to p-type after annealing. Structural analysis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79a8cb70a3a8ba5d04912037fe8d7a5f
https://doi.org/10.1149/09301.0073ecst
https://doi.org/10.1149/09301.0073ecst
Autor:
Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya, Kentarou Sawano
Publikováno v:
Journal of Crystal Growth. 589:126672
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef078f6afc40ddd647205d2a60765d33
https://doi.org/10.1016/j.jcrysgro.2022.126672
https://doi.org/10.1016/j.jcrysgro.2022.126672
Autor:
Kentarou Sawano, Noboru Okamoto, Ryoto Yanagisawa, Masahiro Nomura, Masashi Kurosawa, Md. Mahfuz Alam
Publikováno v:
2019 Compound Semiconductor Week (CSW).
Length-dependent thermal conductivity in $\text{Si}_{1-\mathrm{x}}\text{Ge}_{\mathrm{x}}$ nanocrystalline nanowires was investigated. We found that phonon transport in $\text{Si}_{1-\mathrm{x}}\text{Ge}_{x}$ nanowires is in the intermediate regime be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ddad19b3767b85a94f170bdbd8da99b
https://doi.org/10.1109/iciprm.2019.8819070
https://doi.org/10.1109/iciprm.2019.8819070
Autor:
Kohei Hamaya, Kentarou Sawano, Md. Mahfuz Alam, Kazuya Okada, Michihiro Yamada, Youya Wagatsuma
Publikováno v:
Applied Physics Express. 14:025502
We demonstrate that the critical thickness for Ge-rich strained SiGe layers can be drastically increased by a factor of more then two by means of growth on mesa-patterned Ge-on-Si. The Si0.2Ge0.8 layer grown on sub-millimeter mesa Ge-on-Si is fully s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32181675864eaad719cb2c518ac5ff05
https://doi.org/10.35848/1882-0786/abd4c5
https://doi.org/10.35848/1882-0786/abd4c5