Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Md. Irfan Khan"'
Publikováno v:
Heliyon, Vol 8, Iss 1, Pp e08743- (2022)
Thin films of transparent conductive Al doped ZnO (AZO) thin films were produced via sol-gel spin coating route. Structural, optical, and electrical properties were explored for several dopant concentrations. Formation of crystalline AZO was verified
Externí odkaz:
https://doaj.org/article/c388d7046fde44819297e780e8c557a9
Analytical drain current and performance evaluation for inversion type InGaAs gate-all-around MOSFET
Publikováno v:
AIP Advances, Vol 11, Iss 6, Pp 065108-065108-10 (2021)
This paper presents an analytical investigation of the drain current model for symmetric short channel InGaAs gate-all-around (GAA) MOSFETs valid from depletion to strong inversion using a continuous expression. The development of the core model is f
Externí odkaz:
https://doaj.org/article/fe2278e1d79e4e77834ed98cc8a6be8f
Autor:
Md Irfan Khan, Aaditya Khanal
Publikováno v:
ACS Omega, Vol 9, Iss 28, Pp 30205-30223 (2024)
Externí odkaz:
https://doaj.org/article/1a90f2b8d9a948329e06cdd4c900ab42
Autor:
Gustavo A. Alvarez, Joseph Casamento, Len van Deurzen, Md Irfan Khan, Kamruzzaman Khan, Eugene Jeong, Elaheh Ahmadi, Huili Grace Xing, Debdeep Jena, Zhiting Tian
Publikováno v:
Materials Research Letters, Vol 11, Iss 12, Pp 1048-1054 (2023)
Aluminum scandium nitride (AlScN) has been receiving increasing interest for radio frequency microelectromechanical systems because of their higher achievable bandwidths owing to the larger piezoelectric response of AlScN compared to AlN. However, al
Externí odkaz:
https://doaj.org/article/4f7bbb5068eb4f9daec888d0e1761253
Publikováno v:
Journal of Computational Electronics. 20:1504-1512
This paper presents an analytical investigation of the electrostatic properties of a moderately doped symmetric gate-all-around nanowire MOSFET having InGaAs channel. The model is continuous from depletion to strong inversion regime that circumvents
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::344183c9fe8083ed0307fd32b32052bc
https://doi.org/10.1007/s10825-021-01716-5
https://doi.org/10.1007/s10825-021-01716-5
Autor:
Harish Agarwal, Dharmbir Prasad, Md. Irfan Khan, Sumana Chattaraj, Sushri Mukherjee, Rudra Pratap Singh
Publikováno v:
Advances in Science, Technology and Engineering Systems Journal. 6:472-478
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c81d5d055efb152d7be699c9e280ddc6
https://doi.org/10.25046/aj060151
https://doi.org/10.25046/aj060151
Publikováno v:
IEEE Transactions on Electron Devices. 67:3568-3576
This article presents a comprehensive analytical investigation of electrostatic and transport phenomena of GaN nanowire (NW) junctionless (JL) MOSFET. The evolution of the proposed model involves the solution of quasi 2-D Poisson equation with approp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7027ca4a940ce4c91631dffdf6bac68
https://doi.org/10.1109/ted.2020.3011645
https://doi.org/10.1109/ted.2020.3011645
Autor:
Xinyi Xia, Jian-Sian Li, Zhuoqun Wen, Kamruzzaman Khan, Md Irfan Khan, Elaheh Ahmadi, Yuichi Oshima, David C. Hays, Fan Ren, S. J. Pearton
Publikováno v:
Journal of Vacuum Science & Technology A. 41:023205
There is increasing interest in α-polytype Ga2O3 for power device applications, but there are few published reports on dielectrics for this material. Finding a dielectric with large band offsets for both valence and conduction bands is especially ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::003b4232cd75cfc175bb30b1ee5aa831
https://doi.org/10.1116/6.0002453
https://doi.org/10.1116/6.0002453
Autor:
Xinyi Xia, Jian-Sian Li, Md Irfan Khan, Kamruzzaman Khan, Elaheh Ahmadi, David C. Hays, Fan Ren, S. J. Pearton
Publikováno v:
Journal of Applied Physics. 132:235701
The band alignments of two candidate dielectrics for ScAlN, namely, SiO2 and Al2O2, were obtained by x-ray photoelectron spectroscopy. We compared the effect of deposition method on the valence band offsets of both sputtered and atomic layer depositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7572b4124d32311f535c2c52dedb1add
https://doi.org/10.1063/5.0131766
https://doi.org/10.1063/5.0131766
Publikováno v:
IEEE Transactions on Electron Devices. 66:2923-2931
This paper presents a comprehensive investigation of electrostatics and transport characterization of GaN double-channel (DC) MOS-HEMT. Upon derivation of a polynomial analytical expression establishing a relationship between the Fermi level and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8d8c3634e16418734f33bad71bf7a19
https://doi.org/10.1109/ted.2019.2915837
https://doi.org/10.1109/ted.2019.2915837