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pro vyhledávání: '"Md. Asikul Haque"'
Autor:
S M Sajjad Hossain Rafin, Roni Ahmed, Md. Asadul Haque, Md. Kamal Hossain, Md. Asikul Haque, Osama A. Mohammed
Publikováno v:
Micromachines, Vol 14, Iss 11, p 2045 (2023)
This article provides a comprehensive review of wide and ultrawide bandgap power electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium nitride (GaN), and the emerging device diamond technology. Key parameters examin
Externí odkaz:
https://doaj.org/article/caa420ee6c8046029fc311d6cbf60055
Publikováno v:
2023 Fourth International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc9506a8629fcca3dcc41d1091588100
https://doi.org/10.1109/3d-peim55914.2023.10052535
https://doi.org/10.1109/3d-peim55914.2023.10052535