Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Md Tashfiq Bin Kashem"'
Autor:
Md Tashfiq Bin Kashem, Sadid Muneer, Lhacene Adnane, Faruk Dirisaglik, Ali Gokirmak, Helena Silva
Publikováno v:
ECS Transactions. 108:29-36
Phase change memory (PCM) is a high speed, high density non-volatile resistive memory technology that utilizes different phases (crystalline and amorphous) of phase change materials such as Ge2Sb2Te5 (GST) to store information [1]. Here, the material
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0bf6fe048113e374166d53ad5b14ba2c
https://doi.org/10.1149/10801.0029ecst
https://doi.org/10.1149/10801.0029ecst
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. :2200419
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cef0542659481d270c7714f01dc54d9
https://doi.org/10.1002/pssr.202200419
https://doi.org/10.1002/pssr.202200419
Publikováno v:
ECS Meeting Abstracts. :1031-1031
Phase change memory (PCM) is a high-speed high-endurance non-volatile electronic memory technology which utilizes the electrical resistivity difference between the amorphous and the crystalline phases of phase change materials, such as Ge2Sb2Te5 (GST
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0d6b5ff1d54ad40402442abe3f49918
https://doi.org/10.1149/ma2022-01181031mtgabs
https://doi.org/10.1149/ma2022-01181031mtgabs
Publikováno v:
ECS Meeting Abstracts. :1032-1032
Phase change memory (PCM) is a high-speed non-volatile memory that utilizes the reversible and fast transition between highly conductive crystalline phase and highly resistive (dielectric) amorphous phase of the phase change material to store informa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25dab537622427082eaaa22a2b8162ec
https://doi.org/10.1149/ma2022-01181032mtgabs
https://doi.org/10.1149/ma2022-01181032mtgabs
Publikováno v:
2016 9th International Conference on Electrical and Computer Engineering (ICECE).
We have designed a triple material tri-gate junctionless transistor (n-channel) which acts as a tunnel field effect transistor (TFET) by using the quantum tunneling phenomenon substituting thermionic emission. To turn the device ON, tunneling occurs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79494eab37fbd2fa4ab6be4510bbc200
https://doi.org/10.1109/icece.2016.7853924
https://doi.org/10.1109/icece.2016.7853924
Publikováno v:
2016 9th International Conference on Electrical and Computer Engineering (ICECE).
The present work reports the effect of device doping profile and dimension scaling on electronic properties of a gate and channel engineered symmetric double gate MOSFET. Based on a two dimensional mathematical model incorporating Poisson's and basic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecd6f7b1196ece4be491551b12caeb53
https://doi.org/10.1109/icece.2016.7853904
https://doi.org/10.1109/icece.2016.7853904
Publikováno v:
2015 IEEE International WIE Conference on Electrical and Computer Engineering (WIECON-ECE).
We determine the thermal conductivity of single layer graphene supported on silicon nitride layer followed by a silicon substrate using a three dimensional simulation study. Temperature distribution profile along the graphene flake is obtained and he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ec1c7852431d7c1a29b21a019055071
https://doi.org/10.1109/wiecon-ece.2015.7443968
https://doi.org/10.1109/wiecon-ece.2015.7443968
Autor:
Md. Tashfiq Bin Kashem, Samia Subrina
Publikováno v:
2015 International Conference on Advances in Electrical Engineering (ICAEE).
A two dimensional simulation study has been executed to explore the characteristics of a newly proposed AlGaN/GaN High Electron Mobility Transistor (HEMT) device with triple material gate (TMG) structure. Surface potential and electric field distribu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56f5238825a72c450e7e1dbdd17db0ba
https://doi.org/10.1109/icaee.2015.7506867
https://doi.org/10.1109/icaee.2015.7506867