Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Md Nasir Uddin Bhuyian"'
Autor:
Bharath Babu Nunna, Debdyuti Mandal, Joo Un Lee, Harsimranjit Singh, Shiqiang Zhuang, Durgamadhab Misra, Md Nasir Uddin Bhuyian, Eon Soo Lee
Publikováno v:
Nano Convergence, Vol 6, Iss 1, Pp 1-12 (2019)
Abstract Integrating microfluidics with biosensors is of great research interest with the increasing trend of lab-on-the chip and point-of-care devices. Though there have been numerous studies performed relating microfluidics to the biosensing mechan
Externí odkaz:
https://doaj.org/article/fa5cd2bbc892420f956c32990f0c478e
Autor:
Md Nasir Uddin Bhuyian, Arijit Sengupta, Yiming Ding, Durga Misra, Kandabara Tapily, Robert D. Clark, Steven Consiglio, Cory S. Wajda, Gert J. Leusink
Publikováno v:
ECS Meeting Abstracts. :1008-1008
Germanium devices are widely investigated due to their high hole and electron mobility compared to that of silicon. Mobility above 300 cm2V-1s-1 has been reported for Ge PMOS. On the other hand, Ge NMOS showed poor drive current and low mobility in p
Publikováno v:
2015 IEEE International Reliability Physics Symposium; 2015, p1-30, 30p
Autor:
Bhuyian, Md Nasir Uddin, Misra, Durgamadhab, Tapily, Kandabara, Clark, Robert D., Consiglio, Steven, Wajda, Cory S., Leusink, Gert J.
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Jan/Feb2016, Vol. 34 Issue 1, p011207-1-011207-7, 7p
Publikováno v:
IEEE Transactions on Device & Materials Reliability; Jun2015, Vol. 15 Issue 2, p229-235, 7p
Autor:
Bhuyian, Md Nasir Uddin, Poddar, S., Misra, D., Tapily, K., Clark, R. D., Consiglio, S., Wajda, C. S., Nakamura, G., Leusink, G. J.
Publikováno v:
Applied Physics Letters; 5/11/2015, Vol. 106 Issue 19, p1-4, 4p, 1 Diagram, 1 Chart, 3 Graphs
Autor:
Nunna, Bharath Babu, Mandal, Debdyuti, Lee, Joo Un, Singh, Harsimranjit, Zhuang, Shiqiang, Misra, Durgamadhab, Bhuyian, Md Nasir Uddin, Lee, Eon Soo
Publikováno v:
Nano Convergence; 1/17/2019, Vol. 6 Issue 1, p1-1, 1p
Autor:
Bhuyian, M. Nasir, Misra, D.
Publikováno v:
2015 IEEE International Reliability Physics Symposium; 2015, p00-PI.3.7, 0p
Autor:
Ashok Srivastava, Saraju P. Mohanty
Although existing nanometer CMOS technology is expected to remain dominant for the next decade, new non-classical devices are being developed as the potential replacements of silicon CMOS, in order to meet the ever-present demand for faster, smaller,