Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Mcdonald Robinson"'
Autor:
Cameron J. Kopas, Justin Gonzales, Shengke Zhang, D. R. Queen, Brian Wagner, McDonald Robinson, James Huffman, Nathan Newman
Publikováno v:
AIP Advances, Vol 11, Iss 9, Pp 095007-095007-5 (2021)
In this study, we show that deposited Ge and Si dielectric thin-films can exhibit low microwave losses at single-photon powers and sub-Kelvin temperatures (≈40 mK). This low loss enables their use in a wide range of devices, including coplanar, mic
Externí odkaz:
https://doaj.org/article/14092c6cad9b44afaa7d64a5ae01e76c
Autor:
Daniel Queen, McDonald Robinson, Cameron Kopas, B. Wagner, Justin Gonzales, James Huffman, Shengke Zhang, Nathan Newman
Publikováno v:
AIP Advances, Vol 11, Iss 9, Pp 095007-095007-5 (2021)
In this study, we show that deposited Ge and Si dielectric thin-films can exhibit low microwave losses at single-photon powers and sub-Kelvin temperatures (≈40 mK). This low loss enables their use in a wide range of devices, including coplanar, mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::110e13fbc4a3c5f4cce9b8cfc0d22cc1
https://doi.org/10.1063/5.0041525
https://doi.org/10.1063/5.0041525
Publikováno v:
ECS Transactions. 3:1211-1222
Device performance and reliability are of concern for devices fabricated on strained Si wafers. For strained Si formed by SiGe crystal growth, defects are of particular interest. We characterized such SiGe samples by pulsed MOS capacitor, gate oxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::697449be54a03af3aeb64d72c139f732
https://doi.org/10.1149/1.2355916
https://doi.org/10.1149/1.2355916
Autor:
Jeffrey J. Peterson, McDonald Robinson, Ian W. Boyd, A. Cuadras, Peter J. Bjeletich, Charles E. Hunt, Q. Fang, Jun-Ying Zhang
Publikováno v:
Microelectronic Engineering. 72:218-222
Strained silicon germanium carbon (Si1-x-yGexCy or SiGeC) on silicon was oxidized using a novel photooxidation process. The growth rate of the oxide was investigated and found to depend heavily on the germanium and carbon concentrations. MOS capacito
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::626eeac745493144ce8de5c2cadbcb13
https://doi.org/10.1016/j.mee.2003.12.040
https://doi.org/10.1016/j.mee.2003.12.040
Publikováno v:
Solid-State Electronics. 43:1725-1734
We report on titanium contacts to n-type and p-type Si1−x−yGexCy strained heteroepitaxial layers on (100)Si and material and electrical characterization of n-type and p-type platinum–silicide–germanide contacts to Si1−x−yGexCy strained he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c481da2b95ad6210ad72f4659b4227d3
https://doi.org/10.1016/s0038-1101(99)00059-3
https://doi.org/10.1016/s0038-1101(99)00059-3
Autor:
Ernst Obeneier, Charles E. Hunt, McDonald Robinson, Stefan F. Zappe, Jeff J. Petersoa, Richard C. Westhoff
Publikováno v:
MRS Proceedings. 535
Mobilities in Si1-x-yGex Cy layers were measured using mesa etched Van der Pauw structures for alloy layers with 0 < x < 0.30 and 0 < y < 0.02 and doping levels of 1015 < N < 1018 cm-3. Mobilities in Si1-x-yGex Cy layers with x = 0.27 were found to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::620c3b88ceba0fc3c39f0f13e40c0ea9
https://doi.org/10.1557/proc-535-293
https://doi.org/10.1557/proc-535-293
Publikováno v:
MRS Proceedings. 533
Material and electrical characterization of n-type and p-type Si1-x-yGex Cy epitaxial layers on Si(100) was performed using silicided platinum Schottky contacts. XRD studies show Pt silcidation of SiGeC proceeds from non-reacted Pt to Pt2(SiGeC) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2aa157d9f08e8c6ebada6d6749ff94ed
https://doi.org/10.1557/proc-533-117
https://doi.org/10.1557/proc-533-117
Publikováno v:
SPIE Proceedings.
This paper describes continuing work with three-dimensional (3-D) rotating line-scan vision systems in robotics and measurement. Mathematical algorithms have been developed for use with the line-scan arrangement allowing the extraction of three-dimen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94b9d7ee8355dab82173b3f4911a4d8d
https://doi.org/10.1117/12.230372
https://doi.org/10.1117/12.230372
Autor:
Philip Wong, McDonald Robinson
Publikováno v:
Journal of the American Ceramic Society. 53:617-621
Polycrystalline Al2O3 was chemically vapor-deposited onto sintered Al2O3 substrates by reaction of AlCl3 with (1) H2O, (2) CO:H2, and (3) O2 at 1000° and 1500°C and 0.5 and 5.0 torr. Although the thermodynamics of all these reactions predict the fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c6105091271b93377a05900ee289be1
https://doi.org/10.1111/j.1151-2916.1970.tb15985.x
https://doi.org/10.1111/j.1151-2916.1970.tb15985.x