Zobrazeno 1 - 3
of 3
pro vyhledávání: '"McMillan LarryD."'
Autor:
Moriwaki Nobuyuki, Scott MichaflC., Nakane George, Azuma Masamichi, Paz de Araujo CarlosA., Nakakuma Tetsuji, Cuchiaro JosephD., Kano Gota, McMillan LarryD., Hayashi Shinichiro, Tatsuo Otsuki, Nagano Yoshihisa, Sumi Tatsumi, Uemoto Yasuhiro, Yuji Judai
Publikováno v:
Integrated Ferroelectrics. 6:1-13
A 3V 100ns read/write 256kb ferroelectric nonvolatile memory (FeRAM) is achieved with 1T/1C cells, novel reference cell circuits and cell plate circuits. The FeRAM is fabricated in 1.2um CMOS process with single Aluminum interconnection and Bi based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac99d53f765115d375cc4e2c1c21cf44
https://doi.org/10.1080/10584589508019349
https://doi.org/10.1080/10584589508019349
Autor:
Karasawa, Junichi, Hamada, Yasuaki, Ohashi, Koji, Natori, Eiji, Oguchi, Koichi, Shimoda, Tatsuya, Joshi, Vikram, Solayappan, Nararyan, Lim, Myungho, Celinska, Jolanta, Mcmillan, LarryD., De Araujo, Carlos A. Paz
Publikováno v:
Integrated Ferroelectrics; January 2002, Vol. 48 Issue: 1 p193-202, 10p
Autor:
Solayappan, Narayan, Derbenwick, GaryF., Mcmillan, LarryD., Paz De Araujo, CarlosA., Hayashi, Shinichiro
Publikováno v:
Integrated Ferroelectrics; January 1997, Vol. 14 Issue: 1-4 p237-246, 10p