Zobrazeno 1 - 10
of 40
pro vyhledávání: '"McGuire, G. E."'
Autor:
McGuire, G. E., Strausser, Yale
Compound semiconductors such as Gallium Arsenide, Gallium Aluminum Arsenide, and Indium Phosphide are often difficult to characterize and present a variety of challenges from substrate preparation, to epitaxial growth to dielectric film deposition to
Publikováno v:
Journal of Applied Physics; 9/1/1992, Vol. 72 Issue 5, p1864, 10p, 2 Black and White Photographs, 3 Diagrams, 1 Chart, 1 Graph
Publikováno v:
Journal of Applied Physics; 12/15/1991, Vol. 70 Issue 12, p7579, 9p, 1 Black and White Photograph, 5 Diagrams, 3 Graphs
Autor:
Danyluk, S., McGuire, G. E.
Publikováno v:
Journal of Applied Physics; Dec1974, Vol. 45 Issue 12, p5141-5144, 4p
Publikováno v:
MRS Online Proceedings Library; 2001, Vol. 690 Issue 1, p1-6, 6p
Publikováno v:
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 2004, Vol. 22 Issue 4, p1455-1460, 6p
Publikováno v:
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1998, Vol. 16 Issue 3, p1980-1990, 11p
Publikováno v:
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1990, Vol. 8 Issue 3, p2287-2294, 8p
Publikováno v:
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1983, Vol. 1 Issue 2, p732-738, 7p