Reliability of MOS devices with tungsten gates

Autor: Palumbo, F., Lombardo, S., Stathis, J.H., Narayanan, V., McFeely, F.R., Yurkas, J.J.

Publikováno v: In Microelectronic Engineering 2004 72(1):45-49

Charge trapping in aggressively scaled metal gate/high-k stacks.

Autor: Gusev, E.P., Narayanan, V., Zafar, S., Cabral, C., Jr., Carrier, E., Bojarczuk, N., Callegari, A., Carruthers, R., Chudzik, M., D'Emic, C., Duch, E., Jamison, P., Kozlowski, P., LaTulipe, D., Maitra, K., McFeely, F.R., Newbury, J., Paruchuri, V., Steen, M.

Publikováno v: IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004; 2004, p729-732, 4p

CMOS and memories: From 100 nm to 10 nm!

Autor: Tiwari, S., Solomon, P.M., Welser, J.J., Jones, E.C., McFeely, F.R., Cartier, E.

Publikováno v: Microelectronic Engineering; May 1999, Vol. 46 Issue: 1-4 p3-6, 4p

Fluorine-Silicon Reactions and the Etching of Crystalline Silicon

Autor: Van de Walle, Chris G., McFeely, F.R., Pantelides, Sokrates T.

Publikováno v: Materials Science Forum; January 1991, Vol. 38 Issue: 1 p335-340, 6p

X-RAY PHOTOEMISSION STUDY OF THE ELECTRONIC STRUCTURE OF THE 3d TRANSITION METALS Sc TO Zn

Autor: Ley, L., Kowalczyk, S.P., McFeely, F.R., Shirley, D.A.

Publikováno v: Ley, L.; Kowalczyk, S.P.; McFeely, F.R.; & Shirley, D.A.(1974). X-RAY PHOTOEMISSION STUDY OF THE ELECTRONIC STRUCTURE OF THE 3d TRANSITION METALS Sc TO Zn. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/1jd3b9gf

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http://www.escholarship.org/uc/item/1jd3b9gf