Zobrazeno 1 - 10
of 403
pro vyhledávání: '"McEvoy, Niall"'
Autor:
Speckmann, Carsten, Lang, Julia, Madsen, Jacob, Monazam, Mohammad Reza Ahmadpour, Zagler, Georg, Leuthner, Gregor T., McEvoy, Niall, Mangler, Clemens, Susi, Toma, Kotakoski, Jani
Electron irradiation-induced damage is often the limiting factor in imaging materials prone to ionization or electronic excitations due to inelastic electron scattering. Quantifying the related processes at the atomic scale has only become possible w
Externí odkaz:
http://arxiv.org/abs/2302.10529
Autor:
Åhlgren, E. Harriet, Markevich, Alexander, Scharinger, Sophie, Fickl, Bernhard, Zagler, Georg, Herterich, Felix, McEvoy, Niall, Mangler, Clemens, Kotakoski, Jani
Some of the materials are more affected by oxidation than others. To elucidate the oxidation-induced degradation mechanisms in transition metal chalcogenides, the chemical effects in single layer MoS$_2$ and MoTe$_2$ were studied in situ in an electr
Externí odkaz:
http://arxiv.org/abs/2205.00855
Autor:
Zhang, Xia, Lawless, Julia, Li, Jing, Peters, Lisanne, McEvoy, Niall, Donegan, John F., Bradley, A. Louise
We reveal numerically and experimentally that dielectric resonance can enhance the absorbance and emission of monolayer MoS$_2$. By quantifying the absorbance of the Si disk resonators and the monolayer MoS$_2$ separately, a model taking into account
Externí odkaz:
http://arxiv.org/abs/2112.05931
Autor:
Grillo, Alessandro, Faella, Enver, Pelella, Aniello, Giubileo, Filippo, Ansari, Lida, Gity, Farzan, Hurley, Paul K., McEvoy, Niall, Di Bartolomeo, Antonio
Publikováno v:
Adv. Funct. Mater. 2021, 2105722
Platinum diselenide (PtSe_2) field-effect transistors with ultrathin channel regions exhibit p-type electrical conductivity that is sensitive to temperature and environmental pressure. Exposure to a supercontinuum white light source reveals that posi
Externí odkaz:
http://arxiv.org/abs/2107.09492
Autor:
Cullen, Conor P., Hartwig, Oliver, Coileáin, Cormac Ó, McManus, John B., Peters, Lisanne, Ilhan, Cansu, Duesberg, Georg S., McEvoy, Niall
Transition metal dichalcogenides (TMDs) have been a core constituent of 2D material research throughout the last decade. Over this time, research focus has progressively shifted from synthesis and fundamental investigations, to exploring their proper
Externí odkaz:
http://arxiv.org/abs/2106.07366
Autor:
Cullen, Conor P., Coileáin, Cormac Ó, McManus, John B., Hartwig, Oliver, McCloskey, David, Duesberg, Georg S., McEvoy, Niall
Group-10 transition metal dichalcogenides (TMDs) are rising in prominence within the highly innovative field of 2D materials. While PtS2 has been investigated for potential electronic applications, due to its high charge-carrier mobility and strong l
Externí odkaz:
http://arxiv.org/abs/2104.00061
Autor:
Zhussupbekov, Kuanysh, Ansari, Lida, Elibol, Kenan, Zhussupbekova, Ainur, Kotakoski, Jani, Shvets, Igor V., Duesberg, Georg S., Hurley, Paul K., McEvoy, Niall, Ó Coileáin, Cormac, Gity, Farzan
Publikováno v:
In Applied Materials Today December 2023 35
PtSe$_2$ ultrathin films are used as the channel of back-gated field-effect transistors (FETs) that are investigated at different temperatures and under super-continuous white laser irradiation. The temperature-dependent behavior confirms the semicon
Externí odkaz:
http://arxiv.org/abs/2007.05842
Autor:
Szydłowska, Beata M., Hartwig, Oliver, Tywoniuk, Bartlomiej, Hartman, Tomáš, Stimpel-Lindner, Tanja, Sofer, Zdeněk, McEvoy, Niall, Duesberg, Georg S., Backes, Claudia
Thin films of noble-metal-based transition metal dichalcogenides, such as PtSe$_2$, have attracted increasing attention due to their interesting layer-number dependent properties and application potential. While it is difficult to cleave bulk crystal
Externí odkaz:
http://arxiv.org/abs/2006.04165
Autor:
Manus, John B. Mc, Ilhan, Cansu, Balsamo, Bastien, Downing, Clive, Cullen, Conor P., Stimpfel-Lidner, Tanja, Cunningham, Graeme, Peters, Lisanne, Jones, Lewys, Mullarkey, Daragh, Shvets, Igor V., Duesberg, Georg S., McEvoy, Niall
Tungsten ditelluride is a layered transition metal dichalcogenide (TMD) that has attracted increasing research interest in recent years. WTe2 has demonstrated large non-saturating magnetoresistance, potential for spintronic applications and promise a
Externí odkaz:
http://arxiv.org/abs/2004.11603