Zobrazeno 1 - 10
of 54
pro vyhledávání: '"McCreary, Amber"'
Autor:
Vincent, Tom, Liang, Jiayun, Singh, Simrjit, Castanon, Eli G., Zhang, Xiaotian, McCreary, Amber, Jariwala, Deep, Kazakova, Olga, Balushi, Zakaria Y. Al
Publikováno v:
Applied Physics Reviews 8, 041320 (2021)
The interest in two-dimensional and layered materials continues to expand, driven by the compelling properties of individual atomic layers that can be stacked and/or twisted into synthetic heterostructures. The plethora of electronic properties as we
Externí odkaz:
http://arxiv.org/abs/2103.14194
Autor:
McCreary, Amber, Mai, Thuc T., Utermohlen, Franz G., Simpson, Jeffrey R., Garrity, Kevin F., Feng, Xiaozhou, Shcherbakov, Dmitry, Zhu, Yanglin, Hu, Jin, Weber, Daniel, Watanabe, Kenji, Taniguchi, Takashi, Goldberger, Joshua E., Mao, Zhiqiang, Lau, Chun Ning, Lu, Yuanming, Trivedi, Nandini, Aguilar, Rolando Valdés, Walker, Angela R. Hight
The discovery of 2-dimensional (2D) materials, such as CrI3, that retain magnetic ordering at monolayer thickness has resulted in a surge of research in 2D magnetism from both pure and applied perspectives. Here, we report a magneto-Raman spectroscop
Externí odkaz:
http://arxiv.org/abs/1910.01237
Autor:
McCreary, Amber, Simpson, Jeffrey R., Mai, Thuc T., McMichael, Robert D., Douglas, Jason E., Butch, Nicholas, Dennis, Cindi, Aguilar, Rolando Valdes, Walker, Angela R. Hight
Publikováno v:
Phys. Rev. B 101, 064416 (2020)
Recently it was discovered that van der Waals-bonded magnetic materials retain long range magnetic ordering down to a single layer, opening many avenues in fundamental physics and potential applications of these fascinating materials. One such materi
Externí odkaz:
http://arxiv.org/abs/1908.00608
Autor:
Pradhan, Nihar R., Garcia, Carlos, Isenberg, Bridget, Rhodes, Daniel, Feng, Simin, Memaran, Shahriar, Xin, Yan, McCreary, Amber, Walker, Angela R. Hight, Raeliarijaona, Aldo, Terrones, Humberto, Terrones, Mauricio, McGill, Stephen, Balicas, Luis
Publikováno v:
Scientific Reports (2018)
We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract field-effect carrie
Externí odkaz:
http://arxiv.org/abs/1808.03621
Autor:
Pradhan, Nihar R., McCreary, Amber, Rhodes, Daniel, Lu, Zhengguang, Feng, Simin, Manousakis, Efstratios, Smirnov, Dmitry, Namburu, Raju, Dubey, Madan, Walker, Angela R. Hight, Terrones, Humberto, Terrones, Mauricio, Dobrosavljevic, Vladimir, Balicas, Luis
Publikováno v:
Nano Lett. 15 , 8377 (2015)
In ReS$_2$ a layer-independent direct band-gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS$_2$ crystallizes in the 1T$^{\prime}$-structure which leads to anisotropic physical properties and whose concomitant electron
Externí odkaz:
http://arxiv.org/abs/1510.02128
Publikováno v:
In Nano Today February 2020 30
Autor:
McCreary, Amber, An, Qi, Forster, Aaron M., Liu, Kunwei, He, Siyao, Macosko, Christopher W., Stein, Andreas, Hight Walker, Angela R.
Publikováno v:
In Carbon March 2019 143:793-801
Autor:
Lv, Ruitao, Chen, Gugang, Li, Qing, McCreary, Amber, Botello-Méndez, Andrés, Morozov, S. V., Liang, Liangbo, Declerck, Xavier, Perea-López, Nestor, Cullen, David A., Feng, Simin, Elías, Ana Laura, Cruz-Silva, Rodolfo, Fujisawa, Kazunori, Endo, Morinobu, Kang, Feiyu, Charlier, Jean-Christophe, Meunier, Vincent, Pan, Minghu, Harutyunyan, Avetik R., Novoselov, Konstantin S., Terrones, Mauricio
Publikováno v:
Proceedings of the National Academy of Sciences of the United States of America, 2015 Nov . 112(47), 14527-14532.
Externí odkaz:
https://www.jstor.org/stable/26465852
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