Zobrazeno 1 - 10
of 5 874
pro vyhledávání: '"McClure, D A"'
Autor:
Corcoles, A. D., Kandala, A., Javadi-Abhari, A., McClure, D. T., Cross, A. W., Temme, K., Nation, P. D., Steffen, M., Gambetta, J. M.
Publikováno v:
PROCEEDINGS OF THE IEEE | Vol. 108, No. 8, 1338 (2020)
The concept of quantum computing has inspired a whole new generation of scientists, including physicists, engineers, and computer scientists, to fundamentally change the landscape of information technology. With experimental demonstrations stretching
Externí odkaz:
http://arxiv.org/abs/1910.02894
Autor:
Paik, Hanhee, Mezzacapo, A., Sandberg, Martin, McClure, D. T., Abdo, B., Corcoles, A. D., Dial, O., Bogorin, D. F., Plourde, B. L. T., Steffen, M., Cross, A. W., Gambetta, J. M., Chow, Jerry M.
Publikováno v:
Phys. Rev. Lett. 117, 250502 (2016)
The resonator-induced phase (RIP) gate is a multi-qubit entangling gate that allows a high degree of flexibility in qubit frequencies, making it attractive for quantum operations in large-scale architectures. We experimentally realize the RIP gate wi
Externí odkaz:
http://arxiv.org/abs/1606.00685
Autor:
Gambetta, J. M., Murray, C. E., Fung, Y. -K. -K., McClure, D. T., Dial, O., Shanks, W., Sleight, J., Steffen, M.
Publikováno v:
IEEE Transactions on Applied Superconductivity 27 (1), 1700205 (2017)
Superconducting qubits are sensitive to a variety of loss mechanisms including dielectric loss from interfaces. By changing the physical footprint of the qubit it is possible to modulate sensitivity to surface loss. Here we show a systematic study of
Externí odkaz:
http://arxiv.org/abs/1605.08009
Publikováno v:
Phys. Rev. Applied 5, 011001 (2016)
Using a circuit QED device, we demonstrate a simple qubit measurement pulse shape that yields fast ring-up and ring-down of the readout resonator regardless of the qubit state. The pulse differs from a square pulse only by the inclusion of additional
Externí odkaz:
http://arxiv.org/abs/1503.01456
Publikováno v:
IEEE Transactions on Applied Superconductivity, 24(4), 1700207 (2014)
Significant improvements in superconducting qubit coherence times have been achieved recently with three-dimensional microwave waveguide cavities coupled to transmon qubits. While many of the measurements in this direction have utilized superconducti
Externí odkaz:
http://arxiv.org/abs/1409.3245
Publikováno v:
PRL 108, 256804 (2012)
Resistance oscillations in electronic Fabry-Perot interferometers near fractional quantum Hall (FQH) filling factors 1/3, 2/3, 4/3 and 5/3 in the constrictions are compared to corresponding oscillations near integer quantum Hall (IQH) filling factors
Externí odkaz:
http://arxiv.org/abs/1112.0538
Publikováno v:
Phys.Rev.Lett.105:056804,2010
We investigate dynamic nuclear polarization in quantum point contacts (QPCs) in the integer and fractional quantum Hall regimes. Following the application of a dc bias, fractional plateaus in the QPC shift symmetrically about half filling of the lowe
Externí odkaz:
http://arxiv.org/abs/1004.4435
Autor:
McClure, D. T., Zhang, Yiming, Rosenow, B., Levenson-Falk, E. M., Marcus, C. M., Pfeiffer, L. N., West, K. W.
Publikováno v:
Phys. Rev. Lett. 103 206806 (2009).
We investigate nonlinear transport in electronic Fabry-Perot interferometers in the integer quantum Hall regime. For interferometers sufficiently large that Coulomb blockade effects are absent, a checkerboard-like pattern of conductance oscillations
Externí odkaz:
http://arxiv.org/abs/0903.5097
Autor:
Zhang, Yiming, McClure, D. T., Levenson-Falk, E. M., Marcus, C. M., Pfeiffer, L. N., West, K. W.
Publikováno v:
Phys. Rev. B (RC) 79, 241304 (2009)
Two distinct types of magnetoresistance oscillations are observed in two electronic Fabry-Perot interferometers of different sizes in the integer quantum Hall regime. Measuring these oscillations as a function of magnetic field and gate voltages, we
Externí odkaz:
http://arxiv.org/abs/0901.0127
Publikováno v:
Phys. Rev. Lett. 100, 156801 (2008).
We report measurements of current noise in single- and multi-layer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and averages between
Externí odkaz:
http://arxiv.org/abs/0711.3206