Výsledky vyhledávání - "McArdle, Timothy J"

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Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates

Autor: McArdle, Timothy J., Chu, Jack O., Zhu, Yu, Liu, Zihong, Krishnan, Mahadevaiyer, Breslin, Christopher M., Dimitrakopoulos, Christos, Wisnieff, Robert, Grill, Alfred

Publikováno v: Applied Physics Letters 98, 132108 (2011)

We use ultra-high vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers which are then annealed between 1250 and 1450{\deg}C in vacuum to create epitaxial multilayer graphene (MLG). Despite the surf

Externí odkaz: http://arxiv.org/abs/1103.6160

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Cratered Lorentzian response of driven microwave superconducting nanowire-bridged resonators: oscillatory and magnetic-field induced stochastic states

Autor: Brenner, Matthew W., Gopalakrishnan, Sarang, Ku, Jaseung, McArdle, Timothy J., Eckstein, James N., Shah, Nayana, Goldbart, Paul M., Bezryadin, Alexey

Publikováno v: Phys. Rev. B 83, 184503 (2011)

Microwave Fabry-Perot resonators containing nonlinear mesoscopic elements (such as superconducting nanowires) can be used to explore many-body circuit QED. Here, we report on observations of a superconductor-normal pulsing regime in microwave (GHz) c

Externí odkaz: http://arxiv.org/abs/1101.0817

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Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors

Autor: Dimitrakopoulos, Christos, Lin, Yu-Ming, Grill, Alfred, Farmer, Damon B., Freitag, Marcus, Sun, Yanning, Han, Shu-Jen, Chen, Zhihong, Jenkins, Keith A., Zhu, Yu, Liu, Zihong, McArdle, Timothy J., Ott, John A., Wisnieff, Robert, Avouris, Phaedon

Publikováno v: J. Vac. Sci. Technol. B 28, 985 (2010)

Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated, large, 160 micron x 200 micron Hall bars, and up to 4000 cm^2/Vs, from

Externí odkaz: http://arxiv.org/abs/1006.0980

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Reduced leakage current in Josephson tunnel junctions with codeposited barriers

Autor: Welander, Paul B., McArdle, Timothy J., Eckstein, James N.

Publikováno v: Appl. Phys. Lett. 97, 233510 (2010)

Josephson junctions were fabricated using two different methods of barrier formation. The trilayers employed were Nb/Al-AlOx/Nb on sapphire, where the first two layers were epitaxial. The oxide barrier was formed either by exposing the Al surface to

Externí odkaz: http://arxiv.org/abs/0812.3636

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