GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation

Autor: Hugues Maxime, Hopkinson Mark, Chaqmaqchee Faten, Mazzucato Simone, Oduncuoglu Murat, Balkan Naci, Sun Yun, Gunes Mustafa

Publikováno v: Nanoscale Research Letters, Vol 6, Iss 1, p 104 (2011)

Abstract Hot electron light emission and lasing in semiconductor heterostructure (Hellish) devices are surface emitters the operation of which is based on the longitudinal injection of electrons and holes in the active region. These devices can be de

Externí odkaz: https://doaj.org/article/6f6ff4faa97d4601ac4515b639a3c916

Investigation of the anisotropic electron g factor as a probe of the electronic structure of GaBi$_{x}$As$_{1-x}$/GaAs epilayers

Autor: Broderick, Christopher A., Mazzucato, Simone, Carrère, Hélène, Amand, Thierry, Makhloufi, Hejer, Arnoult, Alexandre, Fontaine, Chantal, Donmez, Omer, Erol, Ayşe, Usman, Muhammad, O'Reilly, Eoin P., Marie, Xavier

Publikováno v: Phys. Rev. B 90, 195301 (2014)

The electron Land\'e g factor ($g^{*}$) is investigated both experimentally and theoretically in a series of GaBi$_{x}$As$_{1-x}$/GaAs strained epitaxial layers, for bismuth compositions up to $x = 3.8$%. We measure $g^{*}$ via time-resolved photolum

Externí odkaz: http://arxiv.org/abs/1409.8467

Large two photon absorption cross section of asymmetric Zn(II) porphyrin complexes substituted in the meso or β pyrrolic position by –C [tbnd]C–C 6H 4X moieties (X = NMe 2, NO 2)

Autor: Collini, Elisabetta, Mazzucato, Simone, Zerbetto, Michele, Ferrante, Camilla, Bozio, Renato, Pizzotti, Maddalena, Tessore, Francesca, Ugo, Renato

Publikováno v: In Chemical Physics Letters 2008 454(1):70-74

The study of non-linearities in photodiodes using electrical auto-correlation

Autor: Vickers, Anthony J ^*, Ucgun, Ercan, Mazzucato, Simone

Publikováno v: In Physica B: Physics of Condensed Matter 1999 272(1):495-498

Anisotropic electron g factor as a probe of the electronic structure of GaBi x As 1 − x / GaAs epilayers

Autor: Broderick, Christopher, Mazzucato, Simone, Carrère, Hélène, Amand, Thierry, Makhloufi, Hajer, Arnoult, Alexandre, Fontaine, Chantal, Donmez, Omer, Erol, Ayşe, Usman, Muhammad, O'Reilly, Eoin, Marie, Xavier

Publikováno v: Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 90 (19), ⟨10.1103/PhysRevB.90.195301⟩
Physical Review B : Condensed matter and materials physics
Physical Review B : Condensed matter and materials physics, American Physical Society, 2014, 90 (19), 〈10.1103/PhysRevB.90.195301〉
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2014, 90 (19), ⟨10.1103/PhysRevB.90.195301⟩

International audience; The electron Landé g factor (g∗) is investigated both experimentally and theoretically in a series of GaBixAs1−x/GaAs strained epitaxial layers, for bismuth compositions up to x=3.8%. We measure g∗ via time-resolved pho

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2567c434ee9f42147c473580904881d2
https://hal.laas.fr/hal-02050898v2/document