Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Mazen Saied"'
Autor:
Emek Yesilada, Mazen Saied, Franck Foussadier, Yves Rody, Christian Gardin, Jerome Belledent, Jonathan Planchot, Frederic Robert, Amandine Borjon, Christophe Couderc, Frank Sundermann, Yorick Trouiller, Jean-Christophe Urbani
Publikováno v:
Microelectronic Engineering. 84:770-773
With the continuous reduction of layout dimension, critical dimension control becomes more and more tricky. Being one contribution of critical dimension variation, etch bias correction needs to get more accurate. The correction by rule-based optical
Autor:
Emek Yesilada, G. Kerrien, Catherine Martinelli, Florent Vautrin, Laurent Le Cam, Christophe Couderc, Jerome Belledent, Frank Sundermann, Patrick Schiavone, Franck Foussadier, Yorick Trouiller, Jonathan Planchot, Jean-Christophe Urbani, Patrick Montgomery, Mazen Saied, Frederic Robert, Amandine Borjon, Bill Willkinson, Yves Rody, Christian Gardin
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2007, 84 (5-8), pp.741-745. ⟨10.1016/j.mee.2007.01.016⟩
Microelectronic Engineering, 2007, 84 (5-8), pp.741-745. ⟨10.1016/j.mee.2007.01.016⟩
Microelectronic Engineering, Elsevier, 2007, 84 (5-8), pp.741-745. ⟨10.1016/j.mee.2007.01.016⟩
Microelectronic Engineering, 2007, 84 (5-8), pp.741-745. ⟨10.1016/j.mee.2007.01.016⟩
International audience; Assist features (AF) are an essential component of reticle enhancement techniques. Their use is indispensable in sub-100 nm technologies to ensure a maximum process window (PW) across chip, especially for critical levels. Inde
Autor:
Yorick Trouiller, Jean-Christophe Le Denmat, G. Kerrien, Alexandre Villaret, Franck Foussadier, Jean Luc Di-Maria, Florent Vautrin, Catherine Martinelli, Mazen Saied, Vincent Farys, Mame Kouna Top, Frederic Robert, C. Gardin, Emek Yesilada, Jonathan Planchot, L. Perraud
Publikováno v:
Proceedings of the SPIE-Optical Microlithography XXII
Proceedings of the SPIE-Optical Microlithography XXII, 2009, volume: 7274, pp.727416-7
Proceedings of the SPIE-Optical Microlithography XXII, 2009, volume: 7274, pp.727416-7
In advanced technology nodes, due to accuracy and computing time constraint, OPC has shifted from discrete simulation to pixel based simulation. The simulation is grid based and then interpolation occurs between grid points. Even if the sampling is d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4121f3dd920e1979c8feff0f8123ae32
https://hal.science/hal-00462562
https://hal.science/hal-00462562
Autor:
George Chen, Emek Yesilada, G. Kerrien, R. Howell, Catherine Martinelli, Naoya Hayashi, L. Depre, F. Foussadier, Jonathan Planchot, James N. Wiley, Hiroyuki Miyashita, J. C. Le Denmat, L. Perraud, Syougo Narukawa, Florent Vautrin, C. Gardin, Alexandre Villaret, Hiroshi Mohri, J. L. Di-Maria, J.-S. Wang, S. Bai, B. Vandewalle, Frederic Robert, Kawashima Satoshi, Tadahiro Takigawa, Katsuya Hayano, V. Arnoux, Vincent Farys, Yorick Trouiller, Anthony Vacca, Mazen Saied, Frank Sundermann
Publikováno v:
SPIE Proceedings.
In the continuous battle to improve critical dimension (CD) uniformity, especially for 45-nanometer (nm) logic advanced products, one important recent advance is the ability to accurately predict the mask CD uniformity contribution to the overall glo
Autor:
Vincent Farys, Mazen Saied, Emek Yesilada, B. Vandewalle, Yorick Trouiller, G. Kerrien, Frederic Robert, Frank Sundermann, Catherine Martinelli, J. C. Le Denmat, Florent Vautrin, L. Perraud, C. Gardin, F. Foussadier, Jonathan Planchot, Alexandre Villaret, Mame Kouna Top
Publikováno v:
Optical Microlithography XXI.
At 45 and 32 nm nodes, one of the most critical layers is the Contact one. Due to the use of hyper NA imaging, the depth of focus starts to be very limited. Moreover the OPC is rapidly limited because of the increase of the pattern density. The limit
Autor:
Jonathan Planchot, Amandine Borjon, Vincent Farys, Yorick Trouiller, Emek Yesilada, Christophe Couderc, Frederic Robert, Nicolo Morgana, Bill Wilkinson, Jean Christophe Urbani, Yves Rody, J. L. Di-Maria, Jerome Belledent, Christian Gardin, Frank Sundermann, Franck Foussadier, G. Kerrien, Catherine Martinelli, Isabelle Schanen, Florent Vautrin, Laurent LeCam, Mazen Saied
Publikováno v:
SPIE Proceedings.
The perpetual shrinking in critical dimensions in semiconductor devices is driving the need for increased resolution in optical lithography. Increasing NA to gain resolution also increases Optical Proximity Correction (OPC) model complexity. Some opt
Autor:
Jonathan Planchot, Catherine Martinelli, Patrick Montgomery, Christophe Couderc, Emek Yesilada, Frederic Robert, Laurent LeCam, G. Kerrien, J. L. Di-Maria, Nicolo Morgana, Bill Wilkinson, Amandine Borjon, Yorick Trouiller, Jean-Christophe Urbani, Jerome Belledent, Franck Foussadier, Florent Vautrin, Mazen Saied, Yves Rody, Christian Gardin, Frank Sundermann, Jean-Damien Chapon, Vincent Farys
Publikováno v:
SPIE Proceedings.
Patterning isolated trenches for bright field layers such as the active layer has always been difficult for lithographers. This patterning is even more challenging for advanced technologies such as the 45nm node where most of the process optimization
Autor:
Scott Warrick, Will Conley, Mazen Saied, Yves Rody, Christian Gardin, Jonathan Planchot, Christophe Couderc, Patrick Montgomery, Pierre-Jerome Goirand, Catherine Martinelli, Amandine Borjon, Frank Sundermann, Bill Wilkinson, Yorick Trouiller, Jean-Christophe Urbani, Frederic Robert, Laurent Le Cam, Florent Vautrin, G. Kerrien, Jerome Belledent, Emic Yesilada, Vincent Farys
Publikováno v:
SPIE Proceedings.
Resolution Enhancement Techniques (RET) are inherently design dependent technologies. To be successful the RET strategy needs to be adapted to the type of circuit desired. For SOC (system on chip), the three main patterning constraints come from: -St
Autor:
Mazen Saied, Amandine Borjon, Jerome Belledent, Florent Vautrin, Laurent LeCam, Christophe Couderc, Franck Foussadier, Catherine Martinelli, Bill Wilkinson, Emek Yesilada, Yves Rody, Christian Gardin, Jean-Luc Di Maria, Frederic Robert, Nicolo Morgana, Vincent Farys, Jonathan Planchot, Yorick Trouiller, Patrick Montgomery, Frank Sundermann, Jean-Christophe Urbani, G. Kerrien
Publikováno v:
23rd European Mask and Lithography Conference.
Several qualification stages are required for new maskshop tools, first step is done by the maskshop internally. Taking a new writer for example, the maskshop will review the basic factory and site acceptance tests, including CD uniformity, CD linear
Autor:
Kevin Lucas, Amandine Borjon, Mazen Saied, Yves Rody, Christian Gardin, Christophe Couderc, Isabelle Schanen, Jerome Belledent, Laurent LeCam, Emek Yesilada, Franck Foussadier, Frank Sundermann, Yorick Trouiller, Jean-Christophe Urbani
Publikováno v:
SPIE Proceedings.
The quality of model-based OPC correction depends strongly on how the model is calibrated in order to generate a resist image as close to the desired shapes as possible. As the k1 process factor decreases and design complexity increases, the correcti