A band gap and photoluminescence properties engineering in BaO semiconductor for ultraviolet (UV) photodetector applications: A comprehensive role of co-doping.

Autor: Saleem S; School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, China. Electronic address: shahrozkamboh1@gmail.com., Jameel MH; Department of Physics and Chemistry, Faculty of Applied Sciences and Technology (FAST), Universiti Tun Hussein Onn Malaysia, 84600 Muar, Johor, Malaysia. Electronic address: mhasnainjamil@gmail.com., Yasin A; School of Materials Science and Engineering, and Henan Key Laboratory of Advanced Magnesium Alloy and Key Laboratory of Materials Processing and Mold Technology, Zhengzhou University, Zhengzhou, China., Mayzan MZHB; Department of Physics and Chemistry, Faculty of Applied Sciences and Technology (FAST), Universiti Tun Hussein Onn Malaysia, 84600 Muar, Johor, Malaysia., Ullah A; School of Chemistry and Chemical Engineering, Shaanxi Normal University, 710119 Shaanxi, Xian, PR China., Althubeiti K; Department of Chemistry, College of Science, Taif University, P.O. BOX. 110, 21944 Taif, Saudi Arabia., Aljohani M; Department of Chemistry, College of Science, Taif University, P.O. BOX. 110, 21944 Taif, Saudi Arabia., Bashir J; Department of Physics, University of Agriculture Faisalabad, 38040, Pakistan.

Publikováno v: Journal of colloid and interface science [J Colloid Interface Sci] 2024 Sep 15; Vol. 670, pp. 599-616. Date of Electronic Publication: 2024 May 18.