Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Mayur Waikar"'
Publikováno v:
Nanoscience and Nanotechnology Letters. 4:645-650
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a80ca35c5a76c031f8e0f8ea2bb4017
https://doi.org/10.1166/nnl.2012.1362
https://doi.org/10.1166/nnl.2012.1362
Autor:
Abhishek Kumar Misra, Mohhamad Aslam, Hemen Kalita, Manali Khare, Anil Kottantharayil, Mayur Waikar, Meenakshi Bhaisare, Amit Gour
Publikováno v:
2012 4th IEEE International Memory Workshop.
Charge storage capability of multilayer graphene (MLG) in floating gate flash memory structure is demonstrated. MLG sheets are considered for this purpose because of the higher work function and higher density of states compared to single layer graph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bce442d9faf49c480ef7cbe81825980
https://doi.org/10.1109/imw.2012.6213626
https://doi.org/10.1109/imw.2012.6213626
Autor:
Anil Kottantharayil, Senthil Srinivasan, Sunny Sadana, Amit Gaur, Abhishek Kumar Misra, Satya Suresh, Mayur Waikar, Meenakshi Bhaisare
Publikováno v:
MRS Proceedings. 1288
We here present, metal nanocrystal (NC) formation statistics (size, density, occupancy or area coverage) on different high dielectric constant (high-K) materials which may be used as tunnel dielectric or intermetal dielectric in flash memory devices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eab000ea3a2938d5d5f3e0a9eda77eeb
https://doi.org/10.1557/opl.2011.208
https://doi.org/10.1557/opl.2011.208
Autor:
Mayur Waikar, Manali Khare, Hemen Kalita, Mohammed Aslam, Anil Kottantharayil, Amit Gour, Abhishek Kumar Misra
Publikováno v:
Applied Physics Letters. 101:129902
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35bb4f7949298e6d528a6cca4f739fd5
https://doi.org/10.1063/1.4754145
https://doi.org/10.1063/1.4754145
Autor:
Amit Gour, Anil Kottantharayil, Manali Khare, Abhishek Kumar Misra, Hemen Kalita, Mayur Waikar, Mohammed Aslam
Publikováno v:
Applied Physics Letters. 100:233506
Graphene with varying number of layers is explored as metal gate electrode in metal oxide semiconductor structure by inserting it between the dielectric (SiO2) and contact metal (TiN) and results are compared with TiN gate electrode. We demonstrate a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::071fba99c104b10a8962462d6d7759a5
https://doi.org/10.1063/1.4726284
https://doi.org/10.1063/1.4726284