Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Mayur Ghatge"'
Publikováno v:
Nature Electronics. 2:506-512
Nanomechanical resonators that can operate in the super high frequency (3–30 GHz) or the extremely high frequency (30–300 GHz) regime could be of use in the development of stable frequency references, wideband spectral processors and high-resolut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f46d4ac6846fb49df21caf945c1a60b6
https://doi.org/10.1038/s41928-019-0305-3
https://doi.org/10.1038/s41928-019-0305-3
Autor:
Mayur Ghatge, Roozbeh Tabrizian
Publikováno v:
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control. 66:1140-1148
This paper presents an analytical approach for the implementation of high quality-factor ( $Q$ ) resonators with arbitrary cross-sectional vibration mode shapes in anisotropic single-crystal substrates. A closed-form dispersion relation is analytical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5e2621ed1021a2f41653df1c322a539
https://doi.org/10.1109/tuffc.2019.2907085
https://doi.org/10.1109/tuffc.2019.2907085
Publikováno v:
IEEE Electron Device Letters. 40:800-803
This letter reports a non-reciprocal filter based on the use of nonlinearities in high quality-factor ( $ {Q}$ ) silicon micro-acoustic resonators with asymmetric piezoelectric transducers. The two-port resonators are created by the integration of 12
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96ab606dd7547497e157c43457ec267b
https://doi.org/10.1109/led.2019.2907089
https://doi.org/10.1109/led.2019.2907089
Publikováno v:
2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers).
This paper reports on a high quality factor ( $Q$ ) gallium nitride (GaN) thickness-shear (TS) bulk acoustic wave resonator with a reduced temperature coefficient of frequency (TCF). $4.2\mu \mathrm{m}$ -thick AlGaN/GaN-on-Si substrate is used to cre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37ca9a9c79de5eddc92354c4170b67ac
https://doi.org/10.1109/transducers50396.2021.9495432
https://doi.org/10.1109/transducers50396.2021.9495432
Publikováno v:
2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems (MEMS).
This paper reports, for the first time, on the engineering of silicon-doped gallium nitride (GaN) based surface acoustic wave (SAW) devices for ultra-stable clocks with frequency stability of better than 20 ppb/°C over the temperature range of −19
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67180649997b20e7cc27dce34deda8e7
https://doi.org/10.1109/mems46641.2020.9056169
https://doi.org/10.1109/mems46641.2020.9056169
Publikováno v:
2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems (MEMS).
This paper reports a super-thin (30nm) integrated metal-ferroelectric-metal (MFM) nano-mechanical resonator using atomically engineered hafnium zirconium oxide (Hf 0.5 Zr 0.5 O 2 ) transducer film. A 10nm-thick atomic layered Hf 0.5 Zr 0.5 O 2 film i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::effa28dc50714b69e79366967b1e4fb2
https://doi.org/10.1109/mems46641.2020.9056212
https://doi.org/10.1109/mems46641.2020.9056212
Publikováno v:
2019 IEEE MTT-S International Microwave Symposium (IMS).
This paper reports, for the first time, on a high quality-factor (Q) super-high-frequency bulk acoustic wave resonator realized from integration of aluminum nitride (AlN) on sidewalls of a non-released single crystal silicon (Si) micro-fin. The non-r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::409de3967e619417addb2a29d798b1c5
https://doi.org/10.1109/mwsym.2019.8700907
https://doi.org/10.1109/mwsym.2019.8700907
Publikováno v:
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII).
This paper reports the use of 10nm ferroelectric hafnium-zirconium-oxide (Hf 0.5 Zr 0.5 O 2 ) transducers for implementation of high quality-factor (Q) bulk acoustic wave (BAW) resonators over ultra- and super-high-frequency regimes. Atomic layer dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23a5fcd4a721f093dced4862c6bea965
https://doi.org/10.1109/transducers.2019.8808308
https://doi.org/10.1109/transducers.2019.8808308
Publikováno v:
IEEE transactions on ultrasonics, ferroelectrics, and frequency control.
In this part of the paper, the numerical and experimental verification of the analytical design procedure is presented. Various waveguide-based test vehicles, implemented in single-crystal silicon and transduced by thin aluminum nitride films, are de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::15516bdc16dd9079aff5795b64142b78
https://pubmed.ncbi.nlm.nih.gov/31059434
https://pubmed.ncbi.nlm.nih.gov/31059434
Publikováno v:
2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems (MEMS).
This paper reports the thinnest ever-reported piezoelectric transducer for realization of extremely miniaturized nanomechanical sensors and actuators. A 10nm hafnium-zirconium-oxide (Hf 0.5 Zr 0.5 O 2 ) (HZO) film is engineered through atomic-level s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12be6a8009c3cedec42c89fbf7e0227e
https://doi.org/10.1109/memsys.2019.8870646
https://doi.org/10.1109/memsys.2019.8870646