Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Mayato Toyama"'
Autor:
Kentaro Matsuura, Jun'Ichi Shimizu, Mayato Toyama, Takumi Ohashi, Iriya Muneta, Seiya Ishihara, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, Hitoshi Wakabayashi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1246-1252 (2018)
We have fabricated large area integrated top-gate ${n}$ MISFETs with sputter-deposited-MoS2 film having n-type operation. A sputtering method enables us to form a large-area MoS2 thin film followed by H2S annealing to compensate sulfur vacancies. Two
Externí odkaz:
https://doaj.org/article/a83116f24e794cb490cc4ec8810be61b
Autor:
Jun'ichi Shimizu, Hitoshi Wakabayashi, Takumi Ohashi, Kuniyuki Kakushima, Atsushi Ogura, Mayato Toyama, Kazuo Tsutsui, Kentaro Matsuura, Iriya Muneta, Seiya Ishihara
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1246-1252 (2018)
We have fabricated large area integrated top-gate ${n}$ MISFETs with sputter-deposited-MoS2 film having n-type operation. A sputtering method enables us to form a large-area MoS2 thin film followed by H2S annealing to compensate sulfur vacancies. Two
Autor:
Atsushi Ogura, Jun'ichi Shimizu, Seiya Ishihara, Hitoshi Wakabayashi, Takumi Ohashi, Mayato Toyama, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui
Publikováno v:
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).
We have fabricated a chip-level-integrated top-gate n MISFET with sputter-deposited-MoS 2 film and confirmed n-type operation. A sputtering method enabled us to form a large-scale MoS 2 thin film followed by H2S annealing to compensate sulfur vacanci
Autor:
Mayato Toyama, Takumi Ohashi, Kentaro Matsuura, Jun’ichi Shimizu, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Publikováno v:
Japanese Journal of Applied Physics; Jul2018, Vol. 57 Issue 7S2, p1-1, 1p