Výsledky vyhledávání - "Mayank T. Bulsara"

Growth of 1‐eV GaNAsSb‐based photovoltaic cell on silicon substrate at different As/Ga beam equivalent pressure ratios

Autor: Prithu Sharma, Soon Fatt Yoon, Satrio Wicaksono, Nelvin Leong, Kian Hua Tan, Mayank T. Bulsara, Daosheng Li, Tim Milakovich, Gene Fitzgerald, Wan Khai Loke

Publikováno v: Progress in Photovoltaics: Research and Applications. 24:340-347

We report the performance of 1-eV GaNAsSb-based photovoltaic samples grown on a Si substrate using molecular beam epitaxy at different As/Ga beam equivalent pressure (BEP) ratios. The light current–voltage curve and spectral response of the samples

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d04f5db484e110d16f47e94ac97a76d2
https://doi.org/10.1002/pip.2705

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Design Optimization of Single-Layer Antireflective Coating for GaAs$_{{\bf 1-}{\bm x}}$P$_{\bm x}$/Si Tandem Cells With $\hbox{x} = \hbox{0}$, 0.17, 0.29, and 0.37

Autor: Sabina Abdul Hadi, Sueda Saylan, Mayank T. Bulsara, Ammar Nayfeh, Marcus S. Dahlem, Tim Milakovich, Eugene A. Fitzgerald

Publikováno v: IEEE Journal of Photovoltaics. 5:425-431

Single-layer antireflective coating (SLARC) materials and design for GaAs1_xPx/Si tandem cells were analyzed by TCAD simulation. We have shown that optimum SLARC thickness is a function of bandgap, thickness, and material quality of top GaAs 1-x P x

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::77c3ad89f8d6333c7ca131a2c73202c6
https://doi.org/10.1109/jphotov.2014.2363559

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Effects of dislocation strain on the epitaxy of lattice-mismatched AlGaInP layers

Autor: Angelo Mascarenhas, Mayank T. Bulsara, Kunal Mukherjee, Daniel A. Beaton, Eugene A. Fitzgerald

Publikováno v: Journal of Crystal Growth. 392:74-80

Strain fields arising from a non-uniform distribution of misfit dislocations in an underlying compositionally graded buffer are shown to be sufficiently strong to modify indium incorporation in III-phosphide light emitting layers. Composition fluctua

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::47578592b46992e47b3c27b0984d819f
https://doi.org/10.1016/j.jcrysgro.2014.01.058

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Controlling Epitaxial GaAsxP1-x/Si1-yGey Heterovalent Interfaces

Autor: Mayank T. Bulsara, Timothy Milakovich, Eugene A. Fitzgerald, Prithu Sharma

Publikováno v: ECS Transactions. 50:333-337

High quality epitaxial growth of GaAsP on SiGe templates would allow access to materials and band gaps that would enable novel, high performance devices on Si. However, GaAsP/SiGe interface engineering has proved to be very complex. In this paper, we

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d95b3d0f05bb150abc055546f3a489ae
https://doi.org/10.1149/05009.0333ecst

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Silicon CMOS Ohmic Contact Technology for Contacting III-V Compound Materials

Autor: Eugene A. Fitzgerald, Nan Y. Pacella, Mayank T. Bulsara, Kunal Mukherjee

Publikováno v: ECS Journal of Solid State Science and Technology. 2:P324-P331

Integration of III-V compound (III-V) semiconductors with Si complementary metal-oxide semiconductor (CMOS) has been an area of great interest because of the circuit performance enhancement that can be gained by placing Si and III-V devices in close

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::520551c4c09ea7959afb177b524632ff
https://doi.org/10.1149/2.015307jss

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Compositionally-graded InGaAs–InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs

Autor: Li Yang, Kenneth E. Lee, Eugene A. Fitzgerald, Mayank T. Bulsara

Publikováno v: Journal of Crystal Growth. 324:103-109

Two approaches for metalorganic chemical vapor deposition (MOCVD)-grown compositionally graded metamorphic buffers on 6° offcut bulk GaAs were investigated. The first approach consisted of tandem graded layers of InGaAs and InGaP with compositional

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a9540a361c4e3aded6d9feb8cb10caf0
https://doi.org/10.1016/j.jcrysgro.2011.04.032

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Si CMOS Contacts to III-V Materials for Monolithic Integration of III-V and Si Devices

Autor: Nan Y. Pacella, Eugene A. Fitzgerald, Mayank T. Bulsara

Publikováno v: ECS Transactions. 35:225-229

Si CMOS-based contact metallurgies to III-V compounds will allow parallel interconnection of Si CMOS and III-V devices and promote monolithic integration. In this study, we report the use of nickel silicides to contact n++ GaAs encapsulated with n++

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2da948d928435c9d1052e59ca8ce952
https://doi.org/10.1149/1.3568864

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Fabrication of GaAs-on-Insulator via Low Temperature Wafer Bonding and Sacrificial Etching of Ge by XeF2

Autor: Eugene A. Fitzgerald, Garrett D. Cole, Mayank T. Bulsara, Yu Bai

Publikováno v: Journal of The Electrochemical Society. 159:H183-H190

Front end integration of III-V compound semiconductor devices with Si complimentary metal-oxide-semiconductor (CMOS) technology requires the development of commercially viable engineered substrates. The fabrication of engineered substrates currently

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ec8a5fa30af707bcf2eb3b3a15e45fd3
https://doi.org/10.1149/2.070202jes

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