Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Mayameen S. Kadhim"'
Publikováno v:
مجلة النهرين للعلوم الهندسية, Vol 18, Iss 2 (2017)
Fabrication of PSi is generated successfully depending upon photo-electrochemical etching process. The purpose is to differentiate the characterization of the PSi monolayer based on c-silicon solar cell compared to the bulk silicon alone. The surface
Externí odkaz:
https://doaj.org/article/4b50217f9088402ba72c081901a477c7
Autor:
Feng Yang, Yanmei Yu, Qian Wang, Mayameen S. Kadhim, Dan Wang, Dong Xie, Ling Yuan, Yong Zhao, Xianglei He, Bai Sun
Publikováno v:
Ceramics International. 49:22460-22470
Publikováno v:
Frontiers of Information Technology & Electronic Engineering. 20:1698-1705
We propose a nonvolatile resistive random access memory device by employing nanodispersion of zirconia (ZrO2) quantum dots (QDs) for the formation of an active layer. The memory devices comprising a typical sandwich structure of Ag (top)/ZrO2 (active
Autor:
Yong Zhao, Feng Yang, Yunming Hou, Yongfang Jia, Bai Sun, Yanmei Yu, Ling Yuan, Wentao Hou, Haixia Peng, Mayameen S. Kadhim
Publikováno v:
ACS Applied Electronic Materials. 1:318-324
A resistive switching random access memory (RRAM) has occupied great scientific and industrial interest for next-generation data storage technology because of its advantages of nonvolatile behavior, low power consumption, high density, rapid writing/
Autor:
Yongfang Jia, Yanmei Yu, Ling Yuan, Feng Yang, Yushu Wang, Mayameen S. Kadhim, Lu Shuangwei, Yong Zhang, Yong Zhao
Publikováno v:
Journal of Materials Science. 54:3174-3186
Morphology is a crucial factor in determining the chemical, optical, and electrical properties of nanoscale materials. In this work, we utilized a facile room-temperature deposition method to synthesize three-dimensional (3D) coral-like Ag2S nanostru
Autor:
Hosameldeen Elshekh, Guoqiang Fu, Yudong Xia, Mayameen S. Kadhim, Bai Sun, Shuangsuo Mao, Wentao Hou, Yong Zhao
Publikováno v:
Journal of Solid State Chemistry. 279:120975
Resistive switching devices based on oxides have outstanding properties, making them a promising candidate to replace today's transistor-based computer memories as non-volatile memories, and can even find future application in neuromorphic computing.
Autor:
Hosameldeen Elshekh, Mashair Babiker, Feng Yang, Bai Sun, Guoqiang Huang, Wentao Hou, Yong Zhao, Yong Zhang, Mayameen S. Kadhim
Publikováno v:
Materials Today Communications. 20:100573
Resistance random access memory (RRAM) has attracted considerable scientific and industrial attention as a next-generation data memory system. In this work, zinc–aluminium layered double hydroxide Zn-Al (LDH) films were sequentially prepared by dir
Autor:
Zhou Yu, Bo Yu, Tao Guo, Dan Wang, Bai Sun, Wentao Hou, Hosameldeen Elshekh, Mayameen S. Kadhim, Yuanzheng Chen
Publikováno v:
Materials Today Communications. 20:100540
It is well known that the resistive switching memory is considered as a promising high-performance storage technology to satisfy the demand of information explosion. In this work, the resistive switching memory device with Ag/Cu(In, Ga)Se2/Mo structu
Autor:
Tao Guo, Mayameen S. Kadhim, Yong Zhao, Ling Yuan, Bai Sun, Yongfang Jia, Yushu Wang, Yanmei Yu, Feng Yang
Publikováno v:
Applied Physics Letters. 113:053502
In this study, large-area ZnO nanorod arrays covering a Zn foil substrate were produced by a low-cost and low temperature approach. In this approach, oxidation of zinc metal was achieved in a formamide/water mixture. Taking advantage of the product,