Zobrazeno 1 - 10
of 77
pro vyhledávání: '"Maya P. Mikhailova"'
Autor:
Yu. P. Yakovlev, L. V. Danilov, Maya P. Mikhailova, E. V. Ivanov, P.S. Kop'ev, K. V. Kalinina
Publikováno v:
Semiconductors. 54:1527-1547
The processes of radiative recombination and impact ionization in light-emitting structures based on bulk semiconductors, heterostructures with high potential barriers, nanostructures with deep quantum wells, and nanocrystals with quantum dots are re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec63b713f226c258938e793f6854c2a2
https://doi.org/10.1134/s1063782620120210
https://doi.org/10.1134/s1063782620120210
Publikováno v:
Semiconductors. 54:1820-1822
We report on the unusually large blue shift of electroluminescence spectrum with increase of the drive current at 77 K in a double-barrier nanoheterostructure with a deep AlSb/InAs0.83Sb0.17/AlSb quantum well grown by MOVPE on n-GaSb:Te substrate. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e71b682250808a3e72fb28ba63e9aa5b
https://doi.org/10.1134/s1063782620140055
https://doi.org/10.1134/s1063782620140055
Publikováno v:
Semiconductors. 53:273-290
This overview is devoted to the discovery, development of the technology, and investigation of III–V semiconductors performed at the Ioffe Institute, where the first steps in fabricating III–V semiconductors were taken in 1950 and investigations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a772604c1d679d23d20da6a4d2e20673
https://doi.org/10.1134/s1063782619030126
https://doi.org/10.1134/s1063782619030126
Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE
Autor:
R. V. Levin, Maya P. Mikhailova, I. A. Andreev, E.V. Kunitsyna, Yu. P. Yakovlev, L. V. Danilov, E. V. Ivanov
Publikováno v:
Semiconductors. 53:46-50
The electroluminescent characteristics of a type-II n-GaSb/n-InAs/p-GaSb heterostructure with a single deep quantum well grown by metalorganic vapor-phase epitaxy are investigated. The energy-band diagram of the structure and the positions of the ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::392beb87c576bb4e21af5f345243264f
https://doi.org/10.1134/s1063782619010159
https://doi.org/10.1134/s1063782619010159
Autor:
Maya P. Mikhailova, L. V. Danilov, Yu. P. Yakovlev, B. V. Pushnyi, R. V. Levin, E.V. Kunitsyna, G. G. Konovalov, I. A. Andreev, N. D. Il’inskaya, E. V. Ivanov
Publikováno v:
Semiconductors. 52:1037-1042
Significant photocurrent/photoconductivity amplification is observed at low reverse biases in a type-II n-GaSb/InAs/p-GaSb heterostructure with a single quantum well (QW), grown by metal-organic vapor phase epitaxy. A sharp increase in the photocurre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f207cdb23bdf65fef32957c4c4c305f5
https://doi.org/10.1134/s1063782618080146
https://doi.org/10.1134/s1063782618080146
Autor:
R. V. Levin, L. V. Danilov, G. G. Konovalov, I. A. Andreev, G. G. Zegrya, B. V. Pushnyi, Maya P. Mikhailova, E. V. Ivanov
Publikováno v:
Semiconductors. 52:493-496
n-GaSb/n-InAs/p-GaSb heterostructure with a single InAs QW was grown for the first time by MOVPE. Photocurrent spectra were obtained at reverse bias in the range from 0 to 0.8 V. It was shown that the photocurrent increases nonlinearly. The maximum o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2165ec4f98149a4f993bd62548793aae
https://doi.org/10.1134/s1063782618040115
https://doi.org/10.1134/s1063782618040115
Publikováno v:
Semiconductors. 51:1148-1152
The effect of the electrostatic potential induced by charge carriers of the same sign, localized in a deep quantum well, on the current–voltage characteristics of photodetector heterostructures is theoretically analyzed. It is shown for the example
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::688729f97f569d95f698ca0414d79667
https://doi.org/10.1134/s1063782617090081
https://doi.org/10.1134/s1063782617090081
Autor:
Alice Hospodková, Igor V. Kochman, Eduard Hulicius, F. Dominec, Maya P. Mikhailova, A.I. Veinger, Jiří Pangrác
Publikováno v:
Journal of Crystal Growth. 464:206-210
Magnetotransport, optical, spin-dependent and topological properties of the composite InAs/GaSb/AlSb quantum wells based on the broken-gap heterojunctions have been actively studied during the last two decades as promising materials for spintronic an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51592d42cda2fe67104cd7153ee0535c
https://doi.org/10.1016/j.jcrysgro.2016.11.079
https://doi.org/10.1016/j.jcrysgro.2016.11.079
Autor:
E. V. Ivanov, L. V. Danilov, Yu. P. Yakovlev, A. A. Pivovarova, P. S. Kop’ev, Maya P. Mikhailova, K. V. Kalinina
Publikováno v:
Journal of Applied Physics. 126:235703
We report on the unusually large blue shift of the electroluminescence spectrum with an increase of the drive current at 77 K in a double-barrier nanoheterostructure with a deep AlSb/InAs0.83Sb0.17/AlSb quantum well grown by metal-organic vapor phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8962acbf4354edf380274e9bc15e5f2f
https://doi.org/10.1063/1.5131027
https://doi.org/10.1063/1.5131027
Publikováno v:
Acta Physica Polonica A. 127:1007-1009
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75077a1edadfe7c4d63f043fcc21baf1
https://doi.org/10.12693/aphyspola.127.1007
https://doi.org/10.12693/aphyspola.127.1007