Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Maya Lakhdara"'
Publikováno v:
Frontiers in Physics, Vol 10 (2022)
A design modification to an existing 3D-trenched pixel detector is proposed, aimed at an improved fabrication yield. The device concept is studied and its performance is evaluated by TCAD simulations, in comparison to the existing one. Although the m
Externí odkaz:
https://doaj.org/article/f7fb0e3b8c254e36a3383608c2ffedcb
Publikováno v:
Russian Microelectronics. 51:192-198
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b18530f74f358538d096d74a81b37fc0
https://doi.org/10.1134/s1063739722010036
https://doi.org/10.1134/s1063739722010036
Publikováno v:
IEEE Transactions on Electron Devices. 68:479-484
This article focuses on the reduction of the self-heating (SH) effect in an advanced SiGe hetero-junction bipolar transistor (HBT) considering the Peltier effect. Bismuth Telluride is the working material for most Peltier cooling devices and thermoel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f08d50cfaa5226ce575ef15cde99f5e5
https://doi.org/10.1109/ted.2020.3044869
https://doi.org/10.1109/ted.2020.3044869
Publikováno v:
Micro & Nano Letters. 15:969-971
A design modification to an existing border termination for active-edge planar radiation detectors is proposed, which enables a dead area reduction and a much larger breakdown voltage to be achieved, with a minor increase in the fabrication complexit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3974f859f97d15934a6f2851fd9c820
https://doi.org/10.1049/mnl.2020.0295
https://doi.org/10.1049/mnl.2020.0295
Робота спрямована на визначення впливу ізоляції канавок на самонагрівання та електричні характеристики біполярного транзистора з гет
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e3d4779fd29be577103a64731d818cf
https://essuir.sumdu.edu.ua/handle/123456789/82594
https://essuir.sumdu.edu.ua/handle/123456789/82594
Основною метою роботи є визначення впливу процентного вмісту германію в основі SiGe біполярного транзистора з гетеропереходом (HBT) для ан
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03d67a65b481268254ea77da629d5f8c
https://essuir.sumdu.edu.ua/handle/123456789/81172
https://essuir.sumdu.edu.ua/handle/123456789/81172
Publikováno v:
Journal of Instrumentation. 16:C10006
Small-pitch, thin 3D Si sensors have been developed for the ATLAS and CMS experiment upgrades at the High Luminosity LHC. The pixel sizes are 50 × 50 µm2 with 1 readout column, and 25 × 100 µm2 with 1 or 2 readout columns (1E and 2E). Owing to th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51ca8ca096a416f9f502aa92ae0202d5
https://doi.org/10.1088/1748-0221/16/10/c10006
https://doi.org/10.1088/1748-0221/16/10/c10006
Publikováno v:
Journal of Physics: Conference Series. 1766:012014
Applications at the High Luminosity LHC (HL-LHC) have required the development of a new generation of 3D pixel sensors with increased pixel granularity, extreme radiation hardness and low material budget. To this purpose, new 3D pixels have small pit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::edffe8a65fab1e3646fc4002cced0809
https://doi.org/10.1088/1742-6596/1766/1/012014
https://doi.org/10.1088/1742-6596/1766/1/012014
Publikováno v:
2018 5th International Conference on Electrical and Electronic Engineering (ICEEE).
This paper presents an investigation of numerical modeling of SiGe HBT (Silicon-Germanium heterojunction Bipolar Transistor). For this, we consider three models: the so called Drift Diffusion Model (DDM), the Isothermal Energy Balance model (EB) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab231bef4b15338aa35fed6b3e8286c0
https://doi.org/10.1109/iceee2.2018.8391336
https://doi.org/10.1109/iceee2.2018.8391336
Publikováno v:
Journal of Computational and Applied Mathematics. 259:925-936
In this paper, we present a mathematical approach to the nanometric thickness optimisation of a heterojunction bipolar transistor (HBT) SiGeC base, which is realised using the BiCMOS (bipolar compatible metal oxide semiconductor) industrial process.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca52a5417667be2f4c15caed2153516b
https://doi.org/10.1016/j.cam.2013.09.076
https://doi.org/10.1016/j.cam.2013.09.076