Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Maximilian W. Feil"'
Autor:
Maximilian W. Feil, Andreas Huerner, Katja Puschkarsky, Christian Schleich, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger, Tibor Grasser
Publikováno v:
Crystals, Vol 10, Iss 12, p 1143 (2020)
Silicon carbide is an emerging material in the field of wide band gap semiconductor devices. Due to its high critical breakdown field and high thermal conductance, silicon carbide MOSFET devices are predestined for high-power applications. The concen
Externí odkaz:
https://doaj.org/article/bbd5655d89664d53bf82cabcad661c74
Autor:
Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc2e7effeb63e0564acf63299000578e
https://doi.org/10.1109/irps48203.2023.10117740
https://doi.org/10.1109/irps48203.2023.10117740
Autor:
Maximilian W. Feil, Hans Reisinger, André Kabakow, Thomas Aichinger, Christian Schleich, Aleksandr Vasilev, Dominic Waldhör, Michael Waltl, Wolfgang Gustin, Tibor Grasser
Publikováno v:
Communications Engineering. 2
Wide-bandgap semiconductors such as silicon carbide, gallium nitride, and diamond are inherently suitable for high power electronics for example in renewable energy applications and electric vehicles. Despite the high interest, the theoretical limit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8147d01d0225ba0b2dc9c5a01383741
https://doi.org/10.1038/s44172-023-00053-8
https://doi.org/10.1038/s44172-023-00053-8
Autor:
Maximilian W. Feil, Hans Reisinger, Dominic Waldhoer, Michael Waltl, Tibor Grasser, Katja Waschneck, Christian Schleich
Publikováno v:
IEEE Transactions on Electron Devices. 68:4016-4021
Silicon carbide (SiC) MOSFETs still exhibit higher drifts of the threshold voltage than comparable silicon devices due to charge trapping, especially regarding small time scales. Understanding this behavior and the consequences in application relevan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64c9723bdf63fe9c2201f0907b828e7c
https://doi.org/10.1109/ted.2021.3092295
https://doi.org/10.1109/ted.2021.3092295
Publikováno v:
IEEE Transactions on Electron Devices. 68:236-243
Bias temperature instability (BTI) has been shown to be the collective response of an ensemble of defects to a gate voltage signal. Each defect can be described using first-order reactions for either charge trapping or defect creation with a broad di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c26cb55a80201088f56a6c41d20f2e1
https://doi.org/10.1109/ted.2020.3036321
https://doi.org/10.1109/ted.2020.3036321
Autor:
Maximilian W. Feil, Hans Reisinger, Andre Kabakow, Thomas Aichinger, Wolfgang Gustin, Tibor Grasser
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c8701b2f2fabb88c28e9eaa601dbe0a
https://doi.org/10.1109/irps48227.2022.9764584
https://doi.org/10.1109/irps48227.2022.9764584
Autor:
He Huang, Alexander F. Richter, Bert Nickel, Maximilian W. Feil, Yiou Wang, Tushar Debnath, Linzhong Wu, Markus Döblinger, Simon Fuchs, Yu Tong
Publikováno v:
Chemistry of Materials
Metal halide perovskites have attracted substantial interest because of their promising properties for optoelectronic applications. Despite much progress made in the field, the exact growth mechani...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad81d1661470551e2bde41d7bdfda8d6
https://doi.org/10.1021/acs.chemmater.0c02467
https://doi.org/10.1021/acs.chemmater.0c02467
Autor:
Agustín Mihi, He Huang, Aurora Manzi, Lakshminarayana Polavarapu, Maximilian W. Feil, Jochen Feldmann, David Vila-Liarte, Markus Döblinger, Juan Luis Garcia-Pomar, Luis M. Liz-Marzán
Publikováno v:
Angewandte Chemie. 132:17903-17909
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7fa4bbaaa1a02b2e3f02573eeaa3a34f
https://doi.org/10.1002/ange.202006152
https://doi.org/10.1002/ange.202006152
Autor:
He Huang, Yu Tong, Lakshminarayana Polavarapu, Yanxiu Li, En-Ping Yao, Maximilian W. Feil, Jochen Feldmann, Alexander F. Richter, Andrey L. Rogach, Markus Döblinger
Publikováno v:
Angewandte Chemie. 131:16710-16715
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17234a3d1f726cb17f4a6390c1922ca0
https://doi.org/10.1002/ange.201906862
https://doi.org/10.1002/ange.201906862
Autor:
Gerald Rescher, Katja Waschneck, Hans Reisinger, Thomas Aichinger, Maximilian W. Feil, P. Salmen
Publikováno v:
IRPS
We present a new, pulsed-gate stress test approach to determine electrical parameter stability of SiC MOSFETs over a lifetime. We demonstrate that the results of our test procedure reflect most realistically worst-case, end-of-life parameter drifts t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7126ada1b4702033392bceecb19da26b
https://doi.org/10.1109/irps46558.2021.9405207
https://doi.org/10.1109/irps46558.2021.9405207