Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Maximilian Rösch"'
Publikováno v:
IEEE Transactions on Electron Devices. 70:1168-1175
Publikováno v:
Microelectronic Engineering. 264:111870
Autor:
Stefan Karner, Oliver Blank, Maximilian Rösch, Manfred Burghammer, Jakub Zalesak, Jozef Keckes, Juraj Todt
Publikováno v:
Materialia. 24:101484
Autor:
Walter Rieger, Oliver Häberlen, Martin Pölzl, Maximilian Rösch, Gerhard Nöbauer, S. Leomant, J. Schoiswohl
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
A novel 25V silicon trench power MOSFET optimized for fast and high efficient switching with record Ron∗Qg and Ron∗Qoss figure-of-merits is reported. A dual channel structure with two different gate oxide thicknesses allows reducing the body diod
Publikováno v:
physica status solidi (c). 1:1308-1315
By numerical modelling local profiles of carrier concentrations, recombination rates and quasi-Fermi levels have been determined in a-Si:H/c-Si heterojunction solar cells from which we calculate the open circuit voltage and the emitted room temperatu
Autor:
R. Siemieniec, Ludwig Josef Balk, Christian Geissler, Maximilian Rösch, Franz Hirler, A. Pugatschow, I. Pawel
Publikováno v:
2007 European Conference on Power Electronics and Applications.
The avalanche behavior of new 150 V trench power MOSFETs was designed with the help of two- dimensional device simulation techniques. The devices employ the compensation principle for low on-state losses. A new edge-termination structure ensures that
Autor:
Andreas Schlögl, Jan Ropohl, Ralf Siemieniec, Uli Hiller, Maximilian Rösch, N. Soufi-Amlashi, Franz Hirler
Publikováno v:
2006 12th International Power Electronics and Motion Control Conference.
A new, rugged 100 V power MOSFET of the OptiMOS?2-family is described. By applying compensation principles, a device technology was developed that combines low on-state resistance R ON with outstanding switching properties. The technology also offers
Autor:
Jan Ropohl, R. Siemieniec, Franz Hirler, N. Soufi-Amlashi, A. Schogl, Uli Hiller, Maximilian Rösch
Publikováno v:
2005 European Conference on Power Electronics and Applications.
A new 100-V power MOSFET of the OPTIMOSreg 2-family is described. The application of compensation principles leads to a device technology that combines low RON with outstanding switching properties. The technology also offers small gate charge QG and
Publikováno v:
IET Circuits, Devices & Systems. 1:341
The avalanche behaviour of a new trench power MOSFET was investigated with the help of measurements and electro-thermal device simulation techniques. Two different destruction regimes were identified experimentally: energy-related destruction and cur
Autor:
Chuang, Hui-Ching1 (AUTHOR), Chen, Jau-er2,3 (AUTHOR) jauer@isc.senshu-u.ac.jp
Publikováno v:
Econometrics (2225-1146). Mar2023, Vol. 11 Issue 1, p6. 20p.