Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Maximilian G, Bartmann"'
Autor:
Daniele Nazzari, Jakob Genser, Masiar Sistani, Maximilian G. Bartmann, Xavier Cartoixà, Riccardo Rurali, Walter M. Weber, Alois Lugstein
Publikováno v:
APL Materials, Vol 11, Iss 11, Pp 111123-111123-7 (2023)
2D materials provide a rapidly expanding platform for the observation of novel physical phenomena and for the realization of cutting-edge optoelectronic devices. In addition to their peculiar individual characteristics, 2D materials can be stacked in
Externí odkaz:
https://doaj.org/article/01c46826958e4529a981569ca15f77c7
Publikováno v:
ACS Photonics. 8:3469-3475
Recent advances in nanoscale optoelectronic Ge devices have exposed their enormous potential for highly sensitive visible and near-infrared CMOS compatible photodetectors. In this respect, Ge nanow...
Autor:
Vladimir G. Dubrovskii, Maximilian G. Bartmann, Hermann Detz, Masiar Sistani, Ilaria Zardo, S. Benter, Alessio Campo, Suzanne Lancaster, Alois Lugstein, Michael Stöger-Pollach
Publikováno v:
Nano Letters. 19:3892-3897
The band offsets occurring at the abrupt heterointerfaces of suitable material combinations offer a powerful design tool for high performance or even new kinds of devices. Because of a large variety of applications for metal-semiconductor heterostruc
Autor:
Alois Lugstein, Sven Barth, Maximilian G. Bartmann, Ivan Zivadinovic, Masiar Sistani, Michael S. Seifner
Publikováno v:
Crystal Growth & Design. 19:2531-2536
Varying the growth conditions of gallium-seeded germanium nanostructures leads to significant variations in morphology, and particularly of the electronic properties inducing a transition from the ...
Autor:
Alois Lugstein, Minh Anh Luong, Walter M. Weber, Maximilian G. Bartmann, Kilian Eysin, Raphael Böckle, Martien Den Hertog, Masiar Sistani
Publikováno v:
Advanced Electronic Materials
Advanced Electronic Materials, 2021, 7 (3), pp.2001178. ⟨10.1002/aelm.202001178⟩
Advanced Electronic Materials, Wiley, 2021, 7 (3), pp.2001178. ⟨10.1002/aelm.202001178⟩
Advanced Electronic Materials, 2021, 7 (3), pp.2001178. ⟨10.1002/aelm.202001178⟩
Advanced Electronic Materials, Wiley, 2021, 7 (3), pp.2001178. ⟨10.1002/aelm.202001178⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::934e1622dbc04f7de20620cefce28d2c
https://hal.science/hal-03429125
https://hal.science/hal-03429125
Autor:
Nadine, Gächter, Fabian, Könemann, Masiar, Sistani, Maximilian G, Bartmann, Marilyne, Sousa, Philipp, Staudinger, Alois, Lugstein, Bernd, Gotsmann
Publikováno v:
Nanoscale. 12(40)
The thermoelectric properties of a nanoscale germanium segment connected by aluminium nanowires are studied using scanning thermal microscopy. The germanium segment of 168 nm length features atomically sharp interfaces to the aluminium wires and is s
Autor:
Masiar Sistani, Alois Lugstein, Bernd Gotsmann, Nadine Gächter, Marilyne Sousa, Philipp Staudinger, Maximilian G. Bartmann, Fabian Könemann
Publikováno v:
Nanoscale
The thermoelectric properties of a nanoscale germanium segment connected by aluminium nanowires are studied using scanning thermal microscopy. The germanium segment of 168 nm length features atomically sharp interfaces to the aluminium wires and is s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::21ca6bd635afd732c20df95b4fa80e25
https://zenodo.org/record/6802562
https://zenodo.org/record/6802562
Autor:
Maximilian G. Bartmann, Minh Anh Luong, Hamid Keshmiri, Zahra Sadre-Momtaz, Nicholas A. Güsken, Alois Lugstein, Masiar Sistani, Martien Den Hertog, Rupert F. Oulton
Publikováno v:
ACS photonics
ACS photonics, American Chemical Society, 2020, 7 (7), pp.1642-1648. ⟨10.1021/acsphotonics.0c00557⟩
ACS Photonics
ACS photonics, 2020, 7 (7), pp.1642-1648. ⟨10.1021/acsphotonics.0c00557⟩
ACS photonics, American Chemical Society, 2020, 7 (7), pp.1642-1648. ⟨10.1021/acsphotonics.0c00557⟩
ACS Photonics
ACS photonics, 2020, 7 (7), pp.1642-1648. ⟨10.1021/acsphotonics.0c00557⟩
Recent advances in guiding and localizing light at the nanoscale exposed the enormous potential of ultrascaled plasmonic devices. In this context, the decay of surface plasmons to hot carriers triggers a variety of applications in boosting the effici
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::20e0f5af72bc05142f54e5d375d31e56
https://hal.archives-ouvertes.fr/hal-02908981/document
https://hal.archives-ouvertes.fr/hal-02908981/document
Autor:
Nicholas A. Güsken, Minh Anh Luong, Rupert F. Oulton, Hamid Keshmiri, Martien Den Hertog, Maximilian G. Bartmann, Alois Lugstein, Masiar Sistani, Eric Robin
Publikováno v:
Journal of Physical Chemistry C
Journal of Physical Chemistry C, American Chemical Society, 2020, 124 (25), pp.13872-13877. ⟨10.1021/acs.jpcc.0c02602⟩
Journal of Physical Chemistry C, 2020, 124 (25), pp.13872-13877. ⟨10.1021/acs.jpcc.0c02602⟩
The Journal of Physical Chemistry. C, Nanomaterials and Interfaces
Journal of Physical Chemistry C, American Chemical Society, 2020, 124 (25), pp.13872-13877. ⟨10.1021/acs.jpcc.0c02602⟩
Journal of Physical Chemistry C, 2020, 124 (25), pp.13872-13877. ⟨10.1021/acs.jpcc.0c02602⟩
The Journal of Physical Chemistry. C, Nanomaterials and Interfaces
International audience; Investigating group-IV-based photonic components is a very active area of research with extensive interest in developing complementary metal-oxide-semiconductor (CMOS) compatible light sources. However, due to the indirect ban
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e5d71ba5e1108b83604eebe3506ba97
https://hal.archives-ouvertes.fr/hal-03429101/document
https://hal.archives-ouvertes.fr/hal-03429101/document
Autor:
Masiar Sistani, Alois Lugstein, Michael S. Seifner, Maximilian G. Bartmann, Jürgen Smoliner, Sven Barth
Publikováno v:
Nanoscale. 10:19443-19449
Metastable germanium–tin alloys are promising materials for optoelectronics and optics. Here we present the first electrical characterization of highly crystalline Ge0.81Sn0.19 nanowires grown in a solution-based process. The investigated Ge0.81Sn0