Výsledky vyhledávání - "Maximenko, Yulia"

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Electric field effects on the band gap and edge states of monolayer 1T'-WTe2

Autor: Maximenko, Yulia, Chang, Yueqing, Chen, Guannan, Hirsbrunner, Mark R., Swiech, Waclaw, Hughes, Taylor L., Wagner, Lucas K., Madhavan, Vidya

Publikováno v: npj Quantum Mater. 7, 29 (2022)

Monolayer 1T'-WTe2 is a quantum spin Hall insulator with a gapped bulk and gapless helical edge states persisting to temperatures around 100 K. Recent studies have revealed a topological-to-trivial phase transition as well the emergence of an unconve

Externí odkaz: http://arxiv.org/abs/2011.10096

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The Future of the Correlated Electron Problem

A central problem in modern condensed matter physics is the understanding of materials with strong electron correlations. Despite extensive work, the essential physics of many of these systems is not understood and there is very little ability to mak

Externí odkaz: http://arxiv.org/abs/2010.00584

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Doping induced Mott collapse and the density wave instabilities in (Sr$_{1-x}$La$_x$)$_3$Ir$_2$O$_7$

Autor: Wang, Zhenyu, Walkup, Daniel, Maximenko, Yulia, Zhou, Wenwen, Hogan, Tom, Wang, Ziqiang, Wilson, Stephen D., Madhavan, Vidya

The path from a Mott insulating phase to high temperature superconductivity encounters a rich set of unconventional phenomena involving the insulator-to-metal transition (IMT) such as emergent electronic orders and pseudogaps that ultimately affect t

Externí odkaz: http://arxiv.org/abs/1905.06469

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Topological nature of step edge states on the surface of topological crystalline insulator Pb$_{0.7}$Sn$_{0.3}$Se

Autor: Iaia, Davide, Wang, Chang-Yan, Maximenko, Yulia, Walkup, Daniel, Sankar, R., Chou, Fangcheng, Lu, Yuan-Ming, Madhavan, Vidya

Publikováno v: Phys. Rev. B 99, 155116 (2019)

In addition to novel surface states, topological insulators can also exhibit robust gapless states at crystalline defects. Step edges constitute a class of common defects on the surface of crystals. In this work we establish the topological nature of

Externí odkaz: http://arxiv.org/abs/1809.10689

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Defect Role in the Carrier Tunable Topological Insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ Thin Films

Autor: Scipioni, Kane L, Wang, Zhenyu, Maximenko, Yulia, Katmis, Ferhat, Steiner, Charlie, Madhavan, Vidya

Publikováno v: Phys. Rev. B 97, 125150 (2018)

Alloys of Bi$_2$Te$_3$ and Sb$_2$Te$_3$ ((Bi$_{1-x}$Sb$_x$)$_2$Te$_3$) have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to conductivi

Externí odkaz: http://arxiv.org/abs/1709.09133

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