Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Maxime Thammasack"'
Publikováno v:
Journal of Electroceramics. 39:137-142
In this paper, we study the post-fabrication phenomenon of natural oxidation of the Ti layer observed in a Pt/HfO2/Ti/Pt Resistive Random Access Memory (OxRRAM) stack with no external influence. We identify that the resistance ratio decreases by 100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::619861f5627a9d4b0c23c24c708d0918
https://doi.org/10.1007/s10832-017-0077-y
https://doi.org/10.1007/s10832-017-0077-y
Autor:
Jury Sandrini, Maxime Thammasack, Michele De Marchi, Pierre-Emmanuel Gaillardon, Tugba Demirci, Yusuf Leblebici, Marios Barlas, Giovanni De Micheli, Davide Sacchetto
Publikováno v:
IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 6:339-351
This work presents the co-integration of resistive random access memory crossbars within a 180 nm Read-Write CMOS chip. $ {\rm TaO}_{ {\rm x}}$ -based ReRAMs have been fabricated and characterized with materials and process steps compatible with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dffd4738db9d779cb3b03fae681618a3
https://doi.org/10.1109/jetcas.2016.2547746
https://doi.org/10.1109/jetcas.2016.2547746
Publikováno v:
ISCAS
This paper presents a read-write design solution for passive ReRAM crossbar memory arrays to overcome the sneak current paths problem. The proposed circuitry includes an auto-calibration feature to overcome the sneak current effects during the READ o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c5f78e104c4ba1f9b57d9880d1c5978
https://doi.org/10.1109/iscas.2015.7168557
https://doi.org/10.1109/iscas.2015.7168557
Autor:
Jury Sandrini, Maxime Thammasack, Yusuf Leblebici, Pierre-Emmanuel Julien Marc Gaillardon, Davide Sacchetto, Xifan Tang, Somayyeh Rahimian Omam, Giovanni De Micheli
Publikováno v:
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2015.
Field Programmable Gate Arrays (FPGAs) rely heavily on complex routing architectures. The routing structures use programmable switches and account for a significant share in the total area, delay and power consumption numbers. With the ability of bei
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50653c21ee67ed27b4104c026ca1ef46
https://doi.org/10.7873/date.2015.1112
https://doi.org/10.7873/date.2015.1112
Autor:
Giovanni De Micheli, Michele De Marchi, Renato Zenobi, Li-Qing Zheng, Christophe Copéret, Pierre-Emmanuel Gaillardon, David Baudouin, Jakub Jagielski, Dmitry Zemlyanov, Sudhir Kumar, Chih-Jen Shih, Maxime Thammasack, Tsung-Han Lin, Tigran Margossian
The race for performance of integrated circuits is nowadays facing a downscale limitation. To overpass this nanoscale limit, modern transistors with complex geometries have flourished, allowing higher performance and energy efficiency. Accompanying t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a2eb2b8e0024e4eb28345f4a8b45335c
https://infoscience.epfl.ch/record/224388
https://infoscience.epfl.ch/record/224388
Resistive random access memory (RRAM) technologies have recently gained large attention from the academic and industrial research communities. Significant efforts have been made to enhance the performance of the memory stacks from both communities th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3bfaa1edca576829fafc9df11e810e9
https://infoscience.epfl.ch/record/233728
https://infoscience.epfl.ch/record/233728
Autor:
Jury Sandrini, Maxime Thammasack, G. De Micheli, Tugba Demirci, Yusuf Leblebici, P.-E. Gaillardon, Davide Sacchetto
Display Omitted TiN/Ta/TaOx/TiN-based ReRAMs compatible with CMOS processes are fabricated.An integration method is applied to achieve chip level ReRAM-CMOS integration.The measured ReRAM integrated cells are suitable for low-voltage applications. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::894f490520383a88201cd4974fa6eea5
https://infoscience.epfl.ch/record/206231
https://infoscience.epfl.ch/record/206231