Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies

Autor: Eric Frayssinet, Damien Valente, Maxime Garcia Barros, Daniel Alquier, Yvon Cordier, Thi Huong Ngo, Marie Lesecq, Rémi Comyn, Jean-Claude De Jaeger, Nicolas Defrance, Micka Bah

Publikováno v: Scientific Reports
Scientific Reports, Vol 10, Iss 1, Pp 1-12 (2020)

AlN nucleation layers are the basement of GaN-on-Si structures grown for light-emitting diodes, high frequency telecommunication and power switching systems. In this context, our work aims to understand the origin of propagation losses in GaN-on-Si H

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c70ad297fb800f8e718abfc05ead0ed6
http://europepmc.org/articles/PMC7447785

Thin Layer Etching of Silicon Nitride: Comparison of Downstream Plasma, Liquid HF and Gaseous HF Processes for Selective Removal after Light Ion Implantation

Autor: Olivier Pollet, Maxime Garcia Barros, Nicolas Posseme, Vincent Ah-Leung

Publikováno v: Solid State Phenomena. 255:69-74

For technology nodes beyond 14nm silicon nitride spacer etching has become a major challenge. Conventional plasma etching techniques based on CHF3/O2 cannot achieve thorough nitride removal on horizontal surfaces without inducing either CD loss or Si

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a9f053e73720ae07b8c21d01154e4fd3
https://doi.org/10.4028/www.scientific.net/ssp.255.69

Thin layer etching of low-k SiCO spacer using hydrogen ion implantation followed by hydrofluoric acid

Autor: Olivier Pollet, G. Audoit, C. Guedj, Sébastien Barnola, Daniel Benoit, Maxime Garcia-Barros, Francois Leverd, Audrey Jannaud, Nicolas Posseme

Publikováno v: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2018, 36 (5), pp.052201. ⟨10.1116/1.5038617⟩
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2018, 36 (5), pp.052201. ⟨10.1116/1.5038617⟩

International audience; Spacer etching realization is considered today as one of the most critical processes for the fully depleted silicon on insulator devices realization. The challenge arises from the fact that low-k spacer needs to be introduced

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25bad278b7bb95f625fbfd1e6f332c7e
https://cea.hal.science/cea-02185184/document

Silicon Nitride Spacer Etching with Nearly Atomic Precision for 2D and 3D Devices

Autor: Vincent Ah-Leung, Nicolas Posseme, Olivier Pollet, Lamia Nouri, Maxime Garcia Barros, Sebastien Barnola

Publikováno v: ECS Meeting Abstracts. :1248-1248

With transistors size scaling down, device processing requirements become more and more stringent. For technology node beyond 14 nm, one of the most critical step is the spacer etching. It requires a perfect anisotropy (no CD loss) without damaging n

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::df526d72342e92f87bd69c42a4c63d33
https://doi.org/10.1149/ma2017-01/25/1248