High efficiency UMG silicon solar cells: impact of compensation on cell parameters

Autor: Peiting Zheng, Andreas Fell, Daniel Macdonald, Roland Einhaus, Kean Chern Fong, Christian Samundsett, Julien Degoulange, Maxime Forster, Fiacre Rougieux

Publikováno v: Progress in Photovoltaics: Research and Applications. 24:725-734

High efficiency solar cells have been fabricated with wafers from an n-type Czochralski grown (Cz) ingot using 100% Upgraded Metallurgical-Grade (UMG) silicon feedstock. The UMG cells fabricated with a passivated emitter and rear totally diffused (PE

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::64f7d1fe3665301f91f98006163aba0d
https://doi.org/10.1002/pip.2729

Compensation engineering for uniform n-type silicon ingots

Autor: Antoine Thomas, Bastien Dehestru, Mustapha Lemiti, Roland Einhaus, Erwann Fourmond, Maxime Forster, Andres Cuevas

Publikováno v: Solar Energy Materials and Solar Cells
Solar Energy Materials and Solar Cells, Elsevier, 2013, 111, pp.146-152. ⟨10.1016/j.solmat.2013.01.001⟩

International audience; This paper addresses a major issue related to the use of upgraded-metallurgical grade silicon for n-type solar cells. We show that n-type silicon ingots, grown from silicon feedstock containing both boron and phosphorus, displ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d8cb46fdee9f718b5b4e073ce861cda
https://doi.org/10.1016/j.solmat.2013.01.001

Incomplete Ionization and Carrier Mobility in Compensated p -Type and n-Type Silicon

Autor: A. Thomas, Mustapha Lemiti, B. Dehestru, Fiacre Rougieux, Andres Cuevas, Erwann Fourmond, Maxime Forster

Publikováno v: IEEE Journal of Photovoltaics
IEEE Journal of Photovoltaics, IEEE, 2013, 3 (1), pp.108-113. ⟨10.1109/JPHOTOV.2012.2210032⟩

International audience; In this paper, we show through both calculations and Hall effect measurements that incomplete ionization of dopants has a greater influence on the majority-carrier density in p-type and n-type compensated Si than in uncompensa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::080ecab6ef319c1fa7f516bb61dbe4c1
https://doi.org/10.1109/jphotov.2012.2210032

Recombination Activity and Impact of the Boron–Oxygen-Related Defect in Compensated N-Type Silicon

Autor: Daniel Macdonald, Bianca Lim, Jan Schmidt, Maxime Forster, Fiacre Rougieux, Andres Cuevas

Publikováno v: IEEE Journal of Photovoltaics. 1:54-58

In this paper, we present experimental data regarding the recombination activity and concentration of the boron-oxygen complex in compensated n-type silicon, doped with phosphorus and boron, when subjected to illumination. Unlike the data of Bothe in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ceb960e9e1cf26c40c2ba6fd5eed66b4
https://doi.org/10.1109/jphotov.2011.2165698

Applications of photoluminescence imaging to dopant and carrier concentration measurements of silicon wafers

Autor: Daniel Macdonald, Xinyu Zhang, Siew Yee Lim, Maxime Forster, Jan Holtkamp, Andres Cuevas, Martin C. Schubert

Photoluminescence-based imaging is most commonly used to measure the excess minority carrier density and its corresponding lifetime. By using appropriate surface treatments, this high-resolution imaging technique can also be used for majority carrier

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c260a60fc65a0fa576d7e8c9a7f8c653
https://publica.fraunhofer.de/handle/publica/232667