Temperature Dependence Study of Electrical and Electro-Optical Performances of Midwave Infrared Ga-Free T2SL Barrier Photodetector

Autor: Maxime Bouschet, Vignesh Arounassalame, Anthony Ramiandrasoa, Isabelle Ribet-Mohamed, Jean-Philippe Perez, Nicolas Péré-Laperne, Philippe Christol

Publikováno v: Applied Sciences, Vol 12, Iss 20, p 10358 (2022)

In this paper, we report on temperature dependence performances of a midwave infrared (MWIR) Ga-free InAs/InAsSb type-II superlattice (T2SL) barrier (XBn) photodetector grown by molecular beam epitaxy on n-type GaSb substrate. The T2SL structure, wit

Externí odkaz: https://doaj.org/article/b18a4e1d8bee40cb89889956c68f226e

Electro-optical characterizations to study minority carrier transport in Ga-free InAs/InAsSb T2SL XBn midwave infrared photodetector

Autor: Clara Bataillon, Sylvie Bernhardt, Rodolphe Alchaar, A. Ramiandrasoa, Vignesh Arounassalame, Maxime Bouschet, Philippe Christol, I. Ribet-Mohamed, Jean-Philippe Perez

Publikováno v: Electro-optical and Infrared Systems: Technology and Applications XVIII and Electro-Optical Remote Sensing XV
Electro-optical and Infrared Systems: Technology and Applications XVIII and Electro-Optical Remote Sensing XV, Sep 2021, Madrid (Online Only), Spain. pp.4, ⟨10.1117/12.2598159⟩

In this communication, we report on electrical and electro-optical characterizations of InAs/InAsSb Type-II superlattice (T2SL) MWIR photodetector, showing a cut-off wavelength at 5 μm. The device, made of a barrier structure in XBn configuration, w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::183817a22ac9c86b4e8b0be421ba226e
https://hal.archives-ouvertes.fr/hal-03469716

Influence of Pixel Etching on Electrical and Electro-Optical Performances of a Ga-Free InAs/InAsSb T2SL Barrier Photodetector for Mid-Wave Infrared Imaging

Autor: Jean-Philippe Perez, Maxime Bouschet, Rodolphe Alchaar, Isabelle Ribet-Mohamed, Vignesh Arounassalame, Francisco de Anda-Salazar, Nicolas Péré-Laperne, Philippe Christol, Clara Bataillon, Ulises Zavala-Moran

Publikováno v: Photonics
Photonics, MDPI, 2021, 8 (6), pp.194. ⟨10.3390/photonics8060194⟩
Photonics, Vol 8, Iss 194, p 194 (2021)
Volume 8
Issue 6

International audience; In this paper, the influence of etching depth on the dark current and photo-response of a mid-wave infrared Ga-free T2SL XBn pixel detector is investigated. Two wet chemical etching depths have been considered for the fabricat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba92e7f4cb320a47baf666ad8071e01c
https://doi.org/10.3390/photonics8060194