Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Maxime Besacier"'
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 35:425-431
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV
Hybrid metrology is a promising approach to access to the critical dimensions of line gratings with precisions. The objective of this work is about using artificial intelligence (AI), mainly artificial neural network (ANN) to improve metrology at nan
Dimensional Control of Line Gratings by Small Angle X-Ray Scattering: Shape and Roughness Extraction
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
The capabilities of Small Angle X-ray Scattering (SAXS) for dimensional control of line gratings are reviewed. We first introduce different experimental methodologies used to extract the pitch, the critical dimension (CD) and the side-wall angle (SWA
Autor:
Charles Valade, Elodie Sungauer, Jérôme Hazart, Sébastien Bérard-Bergery, Maxime Besacier, C. Gourgon
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS
Journal of Micro/Nanolithography, MEMS, and MOEMS, 2019, 18 (03), pp.1. ⟨10.1117/1.JMM.18.3.034001⟩
Journal of Micro/Nanolithography, MEMS, and MOEMS, Society of Photo-optical Instrumentation Engineers, 2019, 18 (03), pp.1. ⟨10.1117/1.JMM.18.3.034001⟩
Journal of Micro/Nanolithography, MEMS, and MOEMS, 2019, 18 (03), pp.1. ⟨10.1117/1.JMM.18.3.034001⟩
Journal of Micro/Nanolithography, MEMS, and MOEMS, Society of Photo-optical Instrumentation Engineers, 2019, 18 (03), pp.1. ⟨10.1117/1.JMM.18.3.034001⟩
In the microelectronics industry, most of the dimensional metrology relies on critical dimension (CD) estimation. These measurements are mainly performed by critical dimension scanning electron microscopy, because it is a very fast, mainly nondestruc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2c308ae57d845aba70448c82a3711ba
https://hal.univ-grenoble-alpes.fr/hal-02324657
https://hal.univ-grenoble-alpes.fr/hal-02324657
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIII
Metrology, Inspection, and Process Control for Microlithography XXXIII, Feb 2019, San Jose, United States. pp.28, ⟨10.1117/12.2514919⟩
Metrology, Inspection, and Process Control for Microlithography XXXIII, Feb 2019, San Jose, United States. pp.28, ⟨10.1117/12.2514919⟩
For the most advanced nodes, line roughness reaches the same order of magnitude as the CD. It results in a huge impact on power consumptions and leads to some device failures. Hence, the control of this morphological aspect needs an adapted metrology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::665a6f162166dfbbe711d2bbba4ca67a
https://hal.univ-grenoble-alpes.fr/hal-02344561
https://hal.univ-grenoble-alpes.fr/hal-02344561
Autor:
Clémence Jamin-Mornet, Alain Ostrovsky, Etienne Mortini, Ludovic Berthier, J. Ducote, Laurent Bidault, B. Le-Gratiet, Maxime Besacier, Amine Lakcher
Publikováno v:
Optical Microlithography XXXI.
From the first digital cameras which appeared during the 70s to cameras of current smartphones, image sensors have undergone significant technological development in the last decades. The development of CMOS image sensor technologies in the 90s has b
Publikováno v:
Proceedings of SPIE, the International Society for Optical Engineering
Proceedings of SPIE, the International Society for Optical Engineering, 2018, pp.10775, art. no. 1077519. ⟨10.1117/12.2327095⟩
Proceedings of SPIE, the International Society for Optical Engineering, SPIE, The International Society for Optical Engineering, 2018, pp.10775, art. no. 1077519. ⟨10.1117/12.2327095⟩
Proceedings of SPIE, the International Society for Optical Engineering, 2018, pp.10775, art. no. 1077519. ⟨10.1117/12.2327095⟩
Proceedings of SPIE, the International Society for Optical Engineering, SPIE, The International Society for Optical Engineering, 2018, pp.10775, art. no. 1077519. ⟨10.1117/12.2327095⟩
Currently, Line Edge Roughness (LER) and Line Width Roughness (LWR) control presents a huge challenge for the lithography step in microelectronic industries. For advanced nodes, this morphological aspect reaches the same order of magnitude than the C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0dd08852590be484bdc3d05ac84e82c2
https://hal.univ-grenoble-alpes.fr/hal-02344525
https://hal.univ-grenoble-alpes.fr/hal-02344525
Autor:
Yoann Blancquaert, Jérôme Reche, Guillaume Freychet, Patrice Gergaud, Thibault Labbaye, Maxime Besacier
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS
Journal of Micro/Nanolithography, MEMS, and MOEMS, Society of Photo-optical Instrumentation Engineers, 2018, 17 (04), pp.1. ⟨10.1117/1.JMM.17.4.041005⟩
Journal of Micro/Nanolithography, MEMS, and MOEMS, 2018, 17 (04), pp.1. ⟨10.1117/1.JMM.17.4.041005⟩
Journal of Micro/Nanolithography, MEMS, and MOEMS, Society of Photo-optical Instrumentation Engineers, 2018, 17 (04), pp.1. ⟨10.1117/1.JMM.17.4.041005⟩
Journal of Micro/Nanolithography, MEMS, and MOEMS, 2018, 17 (04), pp.1. ⟨10.1117/1.JMM.17.4.041005⟩
At modern manufacturing geometries, roughness control presents a huge challenge for the lithography step. For advanced nodes, this morphological aspect reaches the same order of magnitude as the critical dimension (CD). Hence, the control of roughnes
Publikováno v:
Lithography
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa3e373dd308db68efabae3b37f2c1ae
https://doi.org/10.1002/9781118557662.ch2
https://doi.org/10.1002/9781118557662.ch2