Zobrazeno 1 - 1
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pro vyhledávání: '"Maxim Zatolokin"'
Publikováno v:
Vacuum. 70:153-156
Common features of oxygen and selenium atoms’ redistribution in silicon during the high dose implantation and subsequent annealing are discussed. In both cases, the formation of two maximums on the resulting impurity profiles is observed. The first
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f112c12e298af14720643b12310caeec
https://doi.org/10.1016/s0042-207x(02)00634-6
https://doi.org/10.1016/s0042-207x(02)00634-6
