Zobrazeno 1 - 10
of 73
pro vyhledávání: '"Maxim Tsoi"'
Publikováno v:
AIP Advances, Vol 9, Iss 3, Pp 035147-035147-3 (2019)
We investigate the electrically-driven switching between low and high resistance states in antiferromagnetic Sr3Ir2O7 single crystals. We demonstrate that the switching state at high electrical biases displays an increased noise pattern, which is ind
Externí odkaz:
https://doaj.org/article/eef2c9720883470a8befbe2712a71456
Publikováno v:
World Ecology Journal. :17-32
В Волгоградской области единственным аборигенным представителем хвойных древесных растений является J. sabina L., существования популяции
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7de1b91aab42d086a2c2e95e51a02f3b
https://doi.org/10.25726/l7664-5483-8738-s
https://doi.org/10.25726/l7664-5483-8738-s
Publikováno v:
Nanotechnology, Science and Applications
Morgan Williamson,1,2 Cheng Wang,3 Pin-Wei Huang,3 Ganping Ju,3 Maxim Tsoi1,2 1Physics Department, University of Texas at Austin, Austin, TX 78712, USA; 2Texas Materials Institute, University of Texas at Austin, Austin, TX 78712, USA; 3Fremont Resear
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e9be886357ae6ba805de66645866339
https://www.dovepress.com/large-and-local-magnetoresistance-in-a-state-of-the-art-perpendicular--peer-reviewed-article-NSA
https://www.dovepress.com/large-and-local-magnetoresistance-in-a-state-of-the-art-perpendicular--peer-reviewed-article-NSA
Akademický článek
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Autor:
Alex Ivor Bevan, Maxim Tsoi, Stephen K Dove, Gojmir Furlan, Miha Zakotnik, Catalina O. Tudor, Shida Shen, Davide Prosperi
Publikováno v:
Journal of Magnetism and Magnetic Materials. 442:158-162
Recycled NdFeB magnets are emerging as a viable alternative to virgin NdFeB, because of lower production costs and environmental impacts. Recycled NdFeB magnets produced via the recently reported magnet-to-magnet (m2 m™) recycling process display u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbe84c072c93b2e957091344eeb66cd6
https://doi.org/10.1016/j.jmmm.2017.06.117
https://doi.org/10.1016/j.jmmm.2017.06.117
Autor:
Maxim Tsoi
Publikováno v:
Spintronics Handbook: Spin Transport and Magnetism, Second Edition ISBN: 9780429423079
Spintronics Handbook: Spin Transport and Magnetism, Second Edition
Spintronics Handbook: Spin Transport and Magnetism, Second Edition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f20f3ade8ba25d41c8ea472effa975c
https://doi.org/10.1201/9780429423079-7
https://doi.org/10.1201/9780429423079-7
Publikováno v:
Journal of Applied Physics; 2015, Vol. 117 Issue 17, p17C507-1-17C507-4, 4p, 4 Graphs
Publikováno v:
Journal of Physics D: Applied Physics. 53:075302
This work was supported in part by NSF grants DMR-1712101 and DMR-1122603, by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-2015-CRG4-2626, and by C-SPIN, one of six centers of S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7211e3b275e57b223ca60ed40791dd7a
https://doi.org/10.1088/1361-6463/ab5c2e
https://doi.org/10.1088/1361-6463/ab5c2e
Autor:
Shida Shen, L. L. Lev, Maxim Tsoi, Alexander A. Demkov, Kristy J. Kormondy, Jianshi Zhou, Martha R. McCartney, Lingyuan Gao, Vladimir N. Strocov, Xiang Li, Agham Posadas, Marius-Adrian Husanu, Sirong Lu, David J. Smith
Publikováno v:
Scientific Reports
Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
The development of novel nano-oxide spintronic devices would benefit greatly from interfacing with emergent phenomena at oxide interfaces. In this paper, we integrate highly spin-split ferromagnetic semiconductor EuO onto perovskite SrTiO3 (001). A c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c45753aaca01ecc62df4e47ce9844840
http://europepmc.org/articles/PMC5955958
http://europepmc.org/articles/PMC5955958
Publikováno v:
Physical Review B. 97
We study the resistive switching triggered by an applied electrical bias in the antiferromagnetic Mott insulator $\mathrm{S}{\mathrm{r}}_{3}\mathrm{I}{\mathrm{r}}_{2}{\mathrm{O}}_{7}$. The switching was previously associated with an electric-field-dr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ced36a2e1b4487ebd8d8c944619bf7c5
https://doi.org/10.1103/physrevb.97.134431
https://doi.org/10.1103/physrevb.97.134431