Zobrazeno 1 - 10
of 93
pro vyhledávání: '"Maxim S. Shatalov"'
Autor:
A. Kadys, Maxim S. Shatalov, R. Gaska, Michael Shur, Gintautas Tamulaitis, J. W. Yang, J. Jurkevičius, Ramūnas Aleksiejūnas, Žydrūnas Podlipskas, Jūras Mickevičius
Publikováno v:
Journal of Electronic Materials. 44:4706-4709
The interplay between nonradiative recombination and carrier localization in Al x Ga1−x N epilayers (0.11
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82aafde26e1390271c63340b7f4866a7
https://doi.org/10.1007/s11664-015-4132-7
https://doi.org/10.1007/s11664-015-4132-7
Autor:
Maxim S. Shatalov, Zlatko Sitar, F. Shahedipour, Michael Wraback, T.P. Chow, G. S. Tompa, Kenneth A. Jones, K. Udwary
Publikováno v:
Journal of Materials Science. 50:3267-3307
The structure of a number of GaN/AlGaN devices and their associated material growth and processing issues are examined in some detail, and extrapolations are made to predict what the advantages and challenges would accrue for similar AlGaN electrical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f601bd284f435b0d84903db89f9b489
https://doi.org/10.1007/s10853-015-8878-3
https://doi.org/10.1007/s10853-015-8878-3
Autor:
Jūras Mickevičius, Gintautas Tamulaitis, R. Gaska, Michael Shur, Maxim S. Shatalov, J. Jurkevičius, J. W. Yang
Publikováno v:
physica status solidi (b). 252:961-964
The photoluminescence (PL) spectroscopy of AlGaN epilayers and heterostructures under quasi-steady-state conditions at different excitations in a wide temperature range from 8 to 300 K established the connection between the internal quantum efficienc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd7de48b9e74e8398cf669b2c77e3e7a
https://doi.org/10.1002/pssb.201451542
https://doi.org/10.1002/pssb.201451542
We review progress in development of deep ultraviolet light-emitting diodes and discuss key factors currently affecting device performance. Heteroepitaxial growth of AlN and AlGaN by high-temperature epitaxy has resulted in significant improvement of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db0ce060020c88ab74c386f89a411e20
https://doi.org/10.1016/bs.semsem.2016.08.002
https://doi.org/10.1016/bs.semsem.2016.08.002
Autor:
Maxim S. Shatalov, Saulius Marcinkevicius, Remis Gaska, Vytautas Liuolia, Daniel Billingsley, Michael Shur, Jinwei Yang
Publikováno v:
physica status solidi c. 10:853-856
Photoexcited carrier dynamics and localization potentials in Al0.86In0.14N/GaN heterostructure have been examined by time-resolved photoluminescence (PL), transient photoreflectance and scanning near-field optical spectroscopy. The large GaN and AlIn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e42fff1a213ed2f11427f9d531f22ca
https://doi.org/10.1002/pssc.201200599
https://doi.org/10.1002/pssc.201200599
Publikováno v:
SPIE Proceedings.
Scanning near-field PL spectroscopy was applied to study spatial variations of the emission spectra of AlGaN epilayers with AlN molar fractions between 0.3 and 0.7. Experiments were performed at 300 K with 100 nm spatial resolution. In general, photo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4022d64af1b15d3765660670d7e2d418
https://doi.org/10.1117/12.2236999
https://doi.org/10.1117/12.2236999
Autor:
Gintautas Tamulaitis, Maxim S. Shatalov, R. Gaska, Jūras Mickevičius, Michael Shur, J. W. Yang, J. Jurkevičius
Publikováno v:
Physica B: Condensed Matter. 453:40-42
Photoluminescence spectroscopy of AlGaN/AlGaN multiple quantum wells under quasi-steady-state conditions in the temperature range from 8 to 300 K revealed a strong dependence of droop onset threshold on temperature that was explained by the influence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74295283d3cff5882227dfd0fd52d7f9
https://doi.org/10.1016/j.physb.2013.12.019
https://doi.org/10.1016/j.physb.2013.12.019
Autor:
Anand V. Sampath, J. R. Grandusky, G. A. Garrett, Michael Wraback, J. W. Yang, Maxim S. Shatalov, R. Gaska, L. J. Schowalter, Wenhong Sun, Hongen Shen, A. Lunev, Yuriy Bilenko, Michael Shur, Xuhong Hu
Publikováno v:
physica status solidi c. 7:2390-2393
Temperature dependent time-resolved photoluminescence is used to study the development of active regions for optoelectronic devices employing AlGaN nanostructures for deep-UV emission. The changing importance of dislocation versus point defects and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1f8c802863bf46fc9a27a6db3b5a678
https://doi.org/10.1002/pssc.200983906
https://doi.org/10.1002/pssc.200983906
Autor:
Maxim S. Shatalov, R. Gaska, Michael Shur, Asif Khan, A. Lunev, J. Deng, Xiaobo Sharon Hu, Yuriy Bilenko, Thomas M. Katona, J. P. Zhang
Publikováno v:
physica status solidi (a). 203:1815-1818
We report on the development of AlGaN-based deep UV light emitting diodes (LEDs) with emission wavelengths from 254 to 340 nm, focusing on the improvement of 280 nm LEDs efficiency. Under optimal device structure the UV LEDs efficiency was found to s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6266e1e263c5b05bb4ebd84ca7f9fc32
https://doi.org/10.1002/pssa.200565266
https://doi.org/10.1002/pssa.200565266
Autor:
M. Asif Khan, Maxim S. Shatalov, Wenhong Sun, Vinod Adivarahan, Irina Mokina, Grigory Simin, Jinwei Yang, Mikhail Gaevski, A. Sattu
Publikováno v:
physica status solidi (a). 203:1696-1699
We report on growth of Al 0.22 Ga 0.78 N/Al 0.06 Ga 0.94 N nanorods over a-plane GaN template using low pressure metal-organic chemical vapor deposition. Nanorods with average diameter of 100 nm were up to 30 μm long. They grew preferentially along
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9886bf9061e46bbdf00543d63d4cfb8
https://doi.org/10.1002/pssa.200565421
https://doi.org/10.1002/pssa.200565421