Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Maxim G. Drosdetsky"'
Publikováno v:
2018 Moscow Workshop on Electronic and Networking Technologies (MWENT).
The analytical model is used for the simulation of radiation-induced leakage current of digital thermometer DS18B20. The dependencies of the leakage current on the doserate, temperature, and electrical field are investigated experimentally and simula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28a714b43045f10d923aca7a2a7d09cb
https://doi.org/10.1109/mwent.2018.8337205
https://doi.org/10.1109/mwent.2018.8337205
Compact modeling of inter-device radiation-induced leakage underneath the gateless thick STI oxide is presented and validated taking into account CMOS technology and hardness parameters, dose-rate and annealing effects, and dependence on electric mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5eab95cfffdae56a482bd9c7db841360
Autor:
R. G. Useinov, Vasily S. Anashin, Gennady I. Zebrev, V.N. Ulimov, Alexander S. Petrov, Maxim G. Drosdetsky, Artur M. Galimov, Ilya V. Elushov, Renat Sh. Ikhsanov
Publikováno v:
IEEE Transactions on Nuclear Science. 61:1785-1790
Radiation response of bipolar devices irradiated under various electrical modes and dose rates at high doses has been studied. A nonlinear numerical model including ELDRS effects and electric field reduction at high doses has been developed and valid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b4d342ec279dabb916fbbeebf7e5823
https://doi.org/10.1109/tns.2014.2315672
https://doi.org/10.1109/tns.2014.2315672
Publikováno v:
SPIE Proceedings.
A compact MOSFET model is described, which is adapted to simulate the drain current under irradiation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a3ab13d70fd16730c3ee1032190a603
https://doi.org/10.1117/12.2267161
https://doi.org/10.1117/12.2267161
Publikováno v:
2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Temperature behavior of the charge yield and degradation saturation due to the interface precursor depletion has been modeled and simulated. Competition between the time-dependent and true dose rate (ELDRS) effects has been simulated and discussed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dc8734cf423fab7d68b490c8f57e0bc
https://doi.org/10.1109/radecs.2015.7365648
https://doi.org/10.1109/radecs.2015.7365648
Autor:
Gennady I. Zebrev, Maxim G. Drosdetsky
This paper is devoted mainly to mathematical aspects of modeling and simulation of tunnel relaxation of nonequilibrium charged oxide traps located at/near the interface insulator - conductive channel, for instance in irradiated MOS devices. The gener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a49d85c39cc58c3b30199bdcc56222e
http://arxiv.org/abs/1504.04525
http://arxiv.org/abs/1504.04525
Autor:
Gennady I. Zebrev, A. A. Lebedev, I. A. Danilov, Maxim G. Drosdetsky, Valentin O. Turin, Artur M. Galimov
Publikováno v:
SPIE Proceedings.
It is shown that observed non-monotonic behavior of dose degradation in bipolar devices can be explained within the non-linear set of kinetic equations for the oxide trapped charge and surface recombination centers. It has been shown that proposed ea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::241cfcb1bf7fa39e52a18c65d29f6474
https://doi.org/10.1117/12.2180758
https://doi.org/10.1117/12.2180758
Publikováno v:
Journal of Semiconductors. 37:115001
This paper describes an approach to prediction of the thick insulators' radiation response based on modeling of the charge yield, which is dependent on irradiation temperature, dose rate, and electric field magnitudes. Temperature behavior of the cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd0a161ace7e18620e8462c5017ae825
https://doi.org/10.1088/1674-4926/37/11/115001
https://doi.org/10.1088/1674-4926/37/11/115001