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Autor:
Florian Marmonier, Thierry Pellerin, Maxence Soria, Jean-Louis Santailler, F. Boulard, Léo Bonnefond, Johan Rothman, Guillaume Poisson, Pierre Bleuet
Publikováno v:
Infrared Technology and Applications XLVII.
N-on-p extrinsically doped MWIR HgCdTe material and photodiodes have been developed to benefit from the expected reduction of the Auger generation in the p-type absorbing layer. Samples with two doping levels have been characterized using dark curren